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Randy Sandhu

Observed names: R. S. Sandhu, R. Sandhu
OpenAlex ID: A5068704495
Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies
2010 · Augusto Gutierrez-Aitken, Patty Chang-Chien, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 21
Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications
2009 · Augusto Gutierrez-Aitken, Patty Chang-Chien, et al. · IEEE MTT-S International Microwave Symposium digest · 15
InGaAs quantum wells on wafer-bonded InP∕GaAs substrates
2005 · S. Hayashi, R. Sandhu, et al. · Journal of Applied Physics · 13
Strain relaxation and surface roughness of InxAl1−xAs graded buffer layers grown on InP for 6.05Å applications
2004 · A. M. Noori, R. S. Sandhu, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 13
In As ∕ Al Sb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications
2006 · M. D. Lange, R. S. Tsai, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 11
172 GHz divide-by-two circuit using a 0.25-µm InP HBT technology
2009 · C. Monier, M. D'Amore, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 10
Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy
2004 · M. D. Lange, A. Cavus, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 10
Development of 6.00Å graded metamorphic buffer layers and high performance In0.86Al0.14As∕In0.86Ga0.14As heterojunction bipolar transistor devices
2006 · A. Cavus, R. Sandhu, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 5
High indium content metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors
2003 · C. Monier, D. Sawdai, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 5
High performance low power 6.0 A HBT devices and circuits
2005 · C. Monier, A. Cavus, et al. · Conference digest · 2
DC and RF performance of InAs-based bipolar transistors at very low bias
2003 · D. Sawdai, C. Monier, et al. · IEEE Lester Eastman Conference on High Performance Devices · 2
Materials and device properties of ultra-thin 6.0 Å IN/sub X/AL/sub 1-X/AS graded buffer layers and HBTs
2005 · R. Sandhu, S. Hayashi, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 1
Metamorphic 6.0 A Narrow Band Gap HBT Technology on InP Substrates
2006 · A. Cavus, R. Sandhu, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
Influence of Dislocations on InP-Based Transistors With High Indium Content (0.48 < XIn < 1) InxAl1-xAs/ InxGa1-xAs Device Layers
2006 · Randy Sandhu · ECS Meeting Abstracts
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InGaAs / InAlAs quantum wells on wafer bonded InP / GaAs substrates
2005 · S. Hayashi, R. Sandhu, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
Metamorphic 6.0 Å In/sub 0.86/Al/sub 0.14/As/In/sub 0.86/Ga/sub 0.14/As double heterojunction bipolar transistors
2004 · C. Monier, A. Cavus, et al. · Conference digest
Spectral Ellipsometry and Micro-Raman Investigations of MBE Grown GaN on 4H SiC
2004 · Todd Holden, Zhixun Ma, et al. · APS
Impact of Substrate Imperfections on Epitaxial Layer Quality
2003 · M. Wójtowicz, R. Sandhu, et al.
Works count: 18
Citation count: 108
H-index: 7
I10-index: 7
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