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Hyun‐Seop Kim
Observed name:
Hyun-Seop Kim
Institutions:
Kunsan National University,
University of Bristol
Observed institutions:
Kumoh National Institute of Technology,
Kunsan National University,
Tech University of Korea,
University of Bristol,
Hongik University
ORCID:
0000-0002-0272-0576
Observed ORCID:
0000-0002-0272-0576
OpenAlex ID:
A5069015377
Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
2017
·
Hyun-Seop Kim
, Sang-Woo Han
, et al.
·
IEEE Electron Device Letters
·
50
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors
2016
·
Jae-Gil Lee
, Hyun-Seop Kim
, et al.
·
Solid-State Electronics
·
40
Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
2020
·
Hyun-Seop Kim
, Myoung-Jin Kang
, et al.
·
Materials
·
28
PDF
Atomic-layer deposition of crystalline BeO on SiC
2018
·
Seung Min Lee
, Yoonseo Jang
, et al.
·
Applied Surface Science
·
26
Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations
2024
·
Hyun-Seop Kim
, Aditya K. Bhat
, et al.
·
IEEE Transactions on Electron Devices
·
24
Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer
2015
·
Jae-Gil Lee
, Hyun-Seop Kim
, et al.
·
Semiconductor Science and Technology
·
19
Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films
2022
·
Chan-Hee Jang
, Hyun-Seop Kim
, et al.
·
Materials
·
15
PDF
Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO x N y gate insulator
2019
·
Myoung-Jin Kang
, Su-Keun Eom
, et al.
·
Semiconductor Science and Technology
·
14
PDF
Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements
2024
·
Aditya K. Bhat
, Hyun-Seop Kim
, et al.
·
Journal of Applied Physics
·
13
Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere
2015
·
Jae-Gil Lee
, Hyun-Seop Kim
, et al.
·
Semiconductor Science and Technology
·
13
PDF
Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide
2018
·
Hyun-Seop Kim
, Su-Keun Eom
, et al.
·
Vacuum
·
12
On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer
2022
·
Ki-Sik Im
, Uiho Choi
, et al.
·
Applied Physics Letters
·
11
Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs
2020
·
Myoung-Jin Kang
, Hyun-Seop Kim
, et al.
·
Crystals
·
11
PDF
PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier
2020
·
Hyun-Seop Kim
, Myoung-Jin Kang
, et al.
·
Solid-State Electronics
·
11
Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire
2019
·
Uiho Choi
, Hyun-Seop Kim
, et al.
·
physica status solidi (a)
·
9
Recessed AlGaN/GaN UV Phototransistor
2019
·
Won-Ho Jang
, Hyun-Seop Kim
, et al.
·
JSTS Journal of Semiconductor Technology and Science
·
8
SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
2018
·
Hyun-Seop Kim
, Kwang-Seok Seo
, et al.
·
Results in Physics
·
7
PDF
Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT
2019
·
Uiho Choi
, Kyeongjae Lee
, et al.
·
Japanese Journal of Applied Physics
·
6
PDF
Effects of PECVD SiO₂ Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs
2018
·
Hyun-Seop Kim
, Won-Ho Jang
, et al.
·
JSTS Journal of Semiconductor Technology and Science
·
4
Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process
2024
·
Yeo-Reum Yang
, Jun-Hyeok Yim
, et al.
·
Materials Science in Semiconductor Processing
·
3
Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
2017
·
Seonno Yoon
, Seungmin Lee
, et al.
·
Semiconductor Science and Technology
·
3
Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs
2016
·
Hyun-Seop Kim
, Seoweon Heo
, et al.
·
JSTS Journal of Semiconductor Technology and Science
·
3
PDF
A 1.8-kV Normally-Off Al-Rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure
2026
·
Jaejin Heo
, Joocheol Jeong
, et al.
·
IEEE Transactions on Electron Devices
·
2
p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC
2025
·
Hee-Jae Oh
, Dong-Ik Oh
, et al.
·
JSTS Journal of Semiconductor Technology and Science
·
2
Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing
2018
·
Jae-Gil Lee
, Dong-Hwan Kim
, et al.
·
Journal of the Korean Physical Society
·
2
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Works count:
35
Citation count:
340
H-index:
11
I10-index:
14
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