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Zhongzhen Tong

ORCID: 0000-0001-8907-939X
Observed ORCID: 0000-0001-8907-939X
OpenAlex ID: A5069364974
A review on SRAM-based computing in-memory: Circuits, functions, and applications
2022 · Zhiting Lin, Zhongzhen Tong, et al. · Journal of Semiconductors · 72
In Situ Storing 8T SRAM-CIM Macro for Full-Array Boolean Logic and Copy Operations
2022 · Zhiting Lin, Zhongzhen Tong, et al. · IEEE Journal of Solid-State Circuits · 38
A High Throughput In-MRAM-Computing Scheme Using Hybrid p-SOT-MTJ/GAA-CNTFET
2023 · Zhongzhen Tong, Yilin Xu, et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 34
In-MRAM Computing Based on Complementary-Sensing Time-Based Readout Circuit Using Hybrid VGSOT-MTJ/GAA-CNTFET
2024 · Zhongzhen Tong, Sifan Sun, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 32
A Fully Digital SRAM-Based Four-Layer In-Memory Computing Unit Achieving Multiplication Operations and Results Store
2023 · Zhiting Lin, Shaoying Zhang, et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 28
Large-scale complementary carbon nanotube integrated circuits for harsh radiation environments
2025 · Ke Zhang, Daming Zhou, et al. · Science Advances · 21
BSTCIM: A Balanced Symmetry Ternary Fully Digital In-MRAM Computing Macro for Energy Efficiency Neural Network
2024 · Zhongzhen Tong, Chenghang Li, et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 19
A Self-Decryption Pass Transistor Logic-Based In-MRAM Computing Macro Using Hybrid VGSOT-MTJ/GAA-CNTFET
2025 · Zhongzhen Tong, Sifan Sun, et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 16
In-Memory Multibit Multiplication Based on Bitline Shifting
2021 · Jin Zhang, Zhiting Lin, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 13
A Charge-Domain Compute-In-Memory Macro With Cell-Embedded DA Conversion and Two-Stage AD Conversion for Bit-Scalable MAC Operation
2023 · Kaili Zhang, Zhongzhen Tong, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 10
Configurable and High-Throughput CIM SRAM for Boolean Logic Operation With 321 GOPS/kb and 164395.6 GOPS/mm2
2023 · Zhiting Lin, Qian Jin, et al. · IEEE Solid-State Circuits Letters · 10
Configurable Memory With a Multilevel Shared Structure Enabling In-Memory Computing
2022 · Yue Zhao, Zhiting Lin, et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 10
In-Memory Transposable Multibit Multiplication Based on Diagonal Symmetry Weight Block
2023 · Zhongzhen Tong, Yue Zhao, et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 9
A Novel Radiation-Hardened, Speed and Power Optimized Nonvolatile Latch for Aerospace Applications
2024 · Shixing Li, Chenyi Wang, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 7
BaM-CIM: A High Throughput Booth Algorithm-Based In-MRAM Computing Macro Using Hybrid VGSOT-MTJ/GAA-CNTFET
2025 · Chenghang Li, Zhongzhen Tong, et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 6
Configurable in-memory computing architecture based on dual-port SRAM
2024 · Yue Zhao, Yunlong Liu, et al. · Microelectronics Journal · 6
An offset cancellation technique for SRAM sense amplifier based on relation of the delay and offset
2022 · Yue Zhao, Jinkai Wang, et al. · Microelectronics Journal · 6
A Computing In-Memory Multibit Multiplication Based on Decoupling and In-Array Storing
2024 · Jin Zhang, Zhongzhen Tong, et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 4
Phase-change controlled spin–orbit torque magnetic tunnel junction for in-memory sensing and computing
2025 · Yanning Chen, Hanyu Huang, et al. · AIP Advances · 2
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A CIM Macro Embedded With Sign Operations for Parallel Signed Multibit Multiplication-and-Accumulation Using Hybrid Cell Array
2026 · Jin Zhang, Zhongzhen Tong, et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 1
Approximate SOT-MRAM for Neural Network Acceleration with Superior Read Performance
2025 · Yulong Qiu, Chao Wang, et al. · IEEE International Symposium on Circuits and Systems proceedings · 1
Total Ionizing Dose and Single Event Effect of Spin-Orbit Torque Magnetic Tunnel Junctions with Different Bias Conditions
2026 · Xiaojing Li, Hexin Li, et al. · AIP Publishing
Supplement Number 1
2026 · Daming Zhou, Heini Maliya, et al. · AIP Publishing
Total ionizing dose and single-event effect of spin–orbit torque magnetic tunnel junctions with different bias conditions
2026 · Daming Zhou, Heini Maliya, et al. · Applied Physics Letters
High-robustness and high-density VCMA-MRAM with energy-efficient BL-write scheme
2026 · Yaling Wang, Chao Wang, et al. · Microelectronic Engineering
Works count: 36
Citation count: 345
H-index: 10
I10-index: 12
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