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N. Beldi
Observed names:
M. Kechouane, N. Beldi, O. Mouheb, T.,
M. Kechouane, N. Beldi, T . Mohammed-B
Institution:
University of Sciences and Technology Houari Boumediene
Observed institutions:
Centre National de la Recherche Scientifique,
University of Sciences and Technology Houari Boumediene,
Université Rennes 1,
Université de Rennes
OpenAlex ID:
A5069604166
Optimisation of the hydrogen content in a-Si:H deposited at high rate by dc magnetron sputtering
1993
·
N. Beldi
, J. Sib
, et al.
·
Journal of Non-Crystalline Solids
·
13
Oxygen enhancement of 1-54 μm Er3+luminescence in hydrogenated amorphous silicon
1998
·
M. Kechouane
, N. Beldi
, et al.
·
Philosophical Magazine B
·
4
Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering
1999
·
M. Kechouane
, N. Beldi
, et al.
·
Philosophical Magazine B
·
2
Hot-Wire Hydrogen Passivation of Polycrystalline Silicon TFT's
1997
·
N. Beldi
, F. Le Bihan
, et al.
·
MRS Proceedings
·
2
Hydrogen analysis in hydrogenated amorphous silicon thin films produced by d.c. reactive magnetron sputtering
1993
·
N. Ababou
, N. Beldi
, et al.
·
Materials Chemistry and Physics
·
2
1.54 μm Photoluminescence of Erbium Implanted Hydrogenated Amorphous Silicon
1993
·
M. Kechouane
, N. Beldi
, et al.
·
MRS Proceedings
·
2
Electronic Transport Properties of High Deposition Rate a-Si:H Material
1991
·
T. Mohammed-Brahim
, A. Rahal
, et al.
·
Springer eBooks
·
2
1.54 μm Photoluminescence of Erbium Implanted Hydrogenated Amorphous Silicon
1993
·
M. Kechouane
, N. Beldi
, et al.
·
MRS Proceedings
·
1
Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering
1999
·
M. Kechouane, N. Beldi, O. Mouheb, T.
·
Philosophical Magazine B
Oxygen enhancement of 1.54mum Er3+ luminescence in hydrogenated amorphous silicon
1998
·
M. Kechouane, N. Beldi, T . Mohammed-B
·
Philosophical Magazine B
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Works count:
10
Citation count:
28
H-index:
2
I10-index:
1
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