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Semen Krukovskyi

Observed names: S I Krukovskyi, S Krukovskyi, S. I. Krukovskyi, S. Krukovskyi
ORCID: 0000-0002-9780-3429
Observed ORCID: 0000-0002-9780-3429
OpenAlex ID: A5069749985
Features of Low-Temperature GaAs Formation for Epitaxy Device Structures
2022 · S. I. Krukovskyi, V. Arikov, et al. · Journal of Nano- and Electronic Physics · 10
Formation of GaAs\AlGaAs epitaxial layers, with gradient profiles of charge carrier distribution
2018 · S. Krukovskyi, R. Krukovskyi, et al. · IEEE International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET) · 5
Formation of Graded-Gap Active Region of the Photoelectric Converter Based on Algaas Solid Solutions by Trimethylaluminium Flow Modulation in the MOC Vapour Deposition Method
2018 · S. I. Krukovskyi, H. A. Ilchuk, et al. · Journal of Nano- and Electronic Physics · 4
EFFECT OF YTTRIUM DOPING ON THE ELECTRONIC ENERGY STRUCTURE AND OPTICAL PROPERTIES OF GaAs
2026 · H Ilchuk, O Kushnir, et al. · Ukrainian Journal of Physical Optics · 2
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Peculiarities of low-temperature gallium arsenide crystallization under varying cooling rates
2024 · Semen Krukovskyi, Vladyslav Arikov · Computational Problems of Electrical Engineering · 1
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Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate
2017 · R Krukovskyi, Y Mykhashchuk, et al. · Physica Scripta · 1
Effect of Yb and Te doping on the optical properties of Al 0.1 Ga 0.9 As thin films deposited by liquid phase epitaxy
2026 · H A Ilchuk, I V Semkiv, et al. · Physica Scripta
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Concentration dependences of electronic band structure of La-doped GaAs
2026 · H A Ilchuk, I V Semkiv, et al. · Journal of Physics Communications
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Simple and Cost-Effective Flat Silicon Lens Antenna for Millimeter-Wave Applications
2026 · Jakub Sobolewski, Yevhen Yashchyshyn, et al. · International Conference on Microwaves, Radar & Wireless Communications
Electronic Energy Structure of Sc-doped GaAs
2026 · H. A. Ilchuk, I. V. Semkiv, et al. · Journal of Nano- and Electronic Physics
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Properties of Low-Temperature GaAs Obtained by LPE Method for Terahertz Devices
2024 · Semen Krukovskyi, Mykola Vakiv, et al. · Radioelectronics and Communications Systems
Production of GaAs—InGaAs—AlGaAs tandem heterostructures for solar photovoltaic converters
2002 · Yu. Ye. Nikolaienko, S. I. Krukovskyi, et al. · DOAJ (DOAJ: Directory of Open Access Journals)
Works count: 12
Citation count: 23
H-index: 3
I10-index: 1
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