Get started
Author

Satoru Ohshita

Observed name: S. Ohshita
ORCID: 0000-0002-3538-1064
Observed ORCID: 0000-0002-3538-1064
OpenAlex ID: A5069855805
A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications
2019 · Hitoshi Kunitake, Ryo Arasawa, et al. · IEEE Journal of the Electron Devices Society · 43
PDF
Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence
2019 · Shunpei Yamazaki, Satoru Ohshita, et al. · International Journal of Ceramic Engineering & Science · 33
PDF
Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology
2021 · H. Baba, S. Ohshita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors
2018 · Shuhei Maeda, Satoru Ohshita, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 12
A > 64 Multiple States and > 210 TOPS/W High Efficient Computing by Monolithic Si/CAAC-IGZO + Super-Lattice ZrO2/Al2 O3/ZrO2 for Ultra-Low Power Edge AI Application
2022 · M.-C. Chen, S. Ohshita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
High-temperature Electrical Characteristics of 60nm CAAC-IGZO FET : Comparison with Si FET
2018 · H. Kunitake, S. Ohshita, et al. · International Conference on Solid State Devices and Materials (SSDM) · 6
Crystalline Oxide Semiconductor FET-based Analog Neural Network for Intelligent IoT Sensor
2022 · Hidefumi Rikimaru, Satoru Ohshita, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Inverter Using CAAC-IGZO FET with 60-nm Gate Length Fabricated in BEOL
2019 · H. Kunitake, T. Koshida, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
3D monolithic CAAC-IGZO/Si hybrid CMOS ring oscillator and 64 multiple states high efficient (>200TOPS/W) for Analog Memory Computing
2022 · Min-Cheng Chen, Satoru Ohshita, et al. · International Conference on Solid State Devices and Materials (SSDM)
Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications
2021 · Satoru Ohshita, Hidefumi Rikimaru, et al. · International Conference on Solid State Devices and Materials (SSDM)
Characteristics of Scaled CAAC-IGZO FET and Its Application to LSI
2019 · K. Kato, H. Kunitake, et al. · International Conference on Solid State Devices and Materials (SSDM)
Memory LSI using crystalline oxide semiconductor FET
2018 · Koyama Jun, Seki Takako, et al. · IEICE Technical Report; IEICE Tech. Rep.
Works count: 12
Citation count: 126
H-index: 6
I10-index: 5
Year
Topic
Type