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Vafa B. Aliyeva

Observed names: V. Aliyeva, V. B. Alieva, V. B. Aliyeva, V.B. Aliyeva
ORCID: 0009-0007-9629-147X
Observed ORCID: 0009-0007-9629-147X
OpenAlex ID: A5070258404
Structural phase transition in TlGaSe2 under high pressure
2015 · S. H. Jabarov, T. G. Mammadov, et al. · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 35
Magnetodielectric effects in Co-implanted TlInS2and TlGaSe2crystals
2015 · F. Mikailzade, M. Maksutoglu, et al. · Phase Transitions · 24
High Pressure Raman Study of Layered Semiconductor Tlgase2
2018 · S.H. Jabarov, V.B. Aliyeva, et al. · Materials Science-Poland · 23
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Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor
2015 · MirHasan Yu. Seyidov, Faik A. Mikailzade, et al. · Physica B Condensed Matter · 14
Photoelectric activity of structural defects of a single crystal of the ferroelectric-semiconductor TlInS2: La
2014 · A. P. Odrinskii, T. G. Mammadov, et al. · Physics of the Solid State · 14
Pyroelectric properties and structural defects of a layered TlInS2 crystal doped with lanthanum
2014 · M. -H. Yu. Seyidov, A. P. Odrinskii, et al. · Physics of the Solid State · 10
Photovoltaic currents and activity of structural defects in a ferroelectric–semiconductor TlInS2: La single crystal
2016 · A. P. Odrinskii, M. H. Yu. Seyidov, et al. · Physics of the Solid State · 8
Photoelectric activity of defects in La-doped layered TlInS2 crystals
2014 · MirHasan Yu. Seyidov, Rauf A. Suleymanov, et al. · Low Temperature Physics · 8
Polarization switching in undoped and La-doped TlInS2 ferroelectric-semiconductors
2017 · MirHasan Yu. Seyidov, Faik A. Mikailzade, et al. · Physica B Condensed Matter · 7
Raman Scattering in TlGaxIn1–xTe2 Solid Solutions: Experiment and Calculations from First Principles
2025 · A. I. Najafov, G. R. Mahmudova, et al. · Physics of Wave Phenomena · 6
Parametric resonance and photogalvanic currents in layered TlGaSe2 crystals
2017 · A. P. Odrinskii, M.-H. Yu. Seyidov, et al. · Physics of the Solid State · 5
Phononic and Elastic Properties of TlInS2 Crystals of Hexagonal Symmetry: Experiment and Ab Initio Calculations
2026 · N. A. Abdullayev, Z. A. Jahangirli, et al. · Physics of Wave Phenomena · 3
Electronic and Optical Properties of the TlIn3S5 Crystals: Ab Initio Calculation and Experiment
2026 · Z. A. Jahangirli, I. A. Mamedova, et al. · Physics of the Solid State · 1
First-principles calculations to investigate pressure-driven phase transition and elastic properties of TlGaSe2
2026 · V. B. Aliyeva, Z. A. Jahangirli, et al. · Journal of Sol-Gel Science and Technology · 1
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First-Principles Design of 3d Transition-Metal-Doped GaP Nanosheets for Multifunctional Spintronic and Optoelectronic Devices
2026 · N. Ismailova, V. Aliyeva, et al. · Physics of the Solid State
Phonon and Elastic Properties of TlIn3S5 Crystals: Experiment and Calculations from First Principles
2026 · T. G. Mammadov, Z. A. Jahangirli, et al. · Physics of the Solid State
Theoretical and Experimental Study of the Optical and Nonlinear Optical Properties of TlInS2 Crystals of Hexagonal Modification
2026 · N. A. Abdullayev, Z. A. Jahangirli, et al. · Physics of Wave Phenomena
Low-Temperature Electrical Conductivity in Mn-Doped Bi0.9Sb0.1 Solid Solutions
2024 · A. I. Najafov, T. G. Mammadov, et al. · Physics of the Solid State
Влияние легирования бором на термоделокализацию носителей заряда в сегнетоэлектрике - полупроводнике TlInS2
2018 · А. П. Одринский, M. -H. Yu. Seyidov, et al. · BSU Digital Library (Belarusian State University)
Works count: 19
Citation count: 159
H-index: 8
I10-index: 6
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