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Khandker Akif Aabrar

Observed names: Aabrar, Khandker A., Aabrar, Khandker Akif, Akif A. Khandker, K. A. Aabrar, K. Aabrar, K.A. Aabrar, Khandker A. Aabrar
ORCID: 0000-0002-3417-2025
Observed ORCID: 0000-0002-3417-2025
OpenAlex ID: A5070689906
Logic Compatible High-Performance Ferroelectric Transistor Memory
2022 · Sourav Dutta, Huacheng Ye, et al. · IEEE Electron Device Letters · 99
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BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update
2022 · Khandker Akif Aabrar, Sharadindu Gopal Kirtania, et al. · IEEE Transactions on Electron Devices · 70
BEOL Compatible Superlattice FerroFET-based High Precision Analog Weight Cell with Superior Linearity and Symmetry
2021 · Khandker Akif Aabrar, Jorge Gomez, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 51
Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS
2021 · Wriddhi Chakraborty, Khandker Akif Aabrar, et al. · IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 50
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Amorphous Oxide Semiconductors for Monolithic 3D Integrated Circuits
2024 · Suman Datta, E. Sarkar, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 40
Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In2O3 Dual-Gate Transistor
2023 · Khandker Akif Aabrar, Sharadindu Gopal Kirtania, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 40
Lifelong Learning with Monolithic 3D Ferroelectric Ternary Content-Addressable Memory
2021 · S. Dutta, A. Khanna, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 34
Cold-FeFET as Embedded Non-Volatile Memory with Unlimited Cycling Endurance
2023 · Sharadindu Gopal Kirtania, Khandker Akif Aabrar, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 26
On the Reliability of High-Performance Dual Gate (DG) W-Doped In 2 O 3 FET
2024 · Khandker Akif Aabrar, Hyeonwoo Park, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 23
MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio
2024 · Fabia F. Athena, Moses Nnaji, et al. · Advanced Functional Materials · 22
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First Demonstration of High-Performance and Extremely Stable W-Doped In₂O₃ Gate-All-Around (GAA) Nanosheet FET
2025 · Eknath Sarkar, Chengyang Zhang, et al. · IEEE Transactions on Electron Devices · 20
BEOL Compatible Oxide Power Transistors for On- Chip Voltage Conversion in Heterogenous 3D (H3D) Integrated Circuits
2023 · Sunbin Deng, Jungyoun Kwak, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19
A Thousand State Superlattice(SL) FEFET Analog Weight Cell
2022 · K. A. Aabrar, S. G. Kirtania, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 17
First Demonstration of W-Doped In2O3 Gate-All-Around (GAA) Nanosheet FET with Improved Performance and Record Threshold Voltage Stability
2024 · Eknath Sarkar, Chengyang Zhang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Theoretical and Empirical Insight into Dopant, Mobility and Defect States in W Doped Amorphous In2 O3 for High-Performance Enhancement Mode BEOL Transistors
2022 · Yaoqiao Hu, Huacheng Ye, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Direct Quantitative Extraction of Internal Variables from Measured PUND Characteristics Providing New Key Insights into Physics and Performance of Silicon and Oxide Channel Ferroelectric FETs
2022 · Matthias Passlack, Nujhat Tasneem, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Amorphous Indium Oxide Channel FeFETs with Write Voltage of 0.9V and Endurance >1012 for Refresh-Free 1T-1FeFET Embedded Memory
2024 · Sharadindu Gopal Kirtania, Omkar Phadke, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
Pseudo-Static 1T Capacitorless DRAM using 22nm FDSOI for Cryogenic Cache Memory
2021 · Wriddhi Chakraborty, Rakshith Saligram, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
Self-Healing Ferroelectric Capacitors with ∼ 1000x Endurance Improvement at High Temperatures (85–125°C)
2024 · Nashrah Afroze, Andrea Padovani, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Demonstration of On-Chip Switched-Capacitor DC-DC Converters using BEOL Compatible Oxide Power Transistors and Superlattice MIM Capacitors
2024 · Sunbin Deng, Jungyoun Kwak, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 10
Large Injection Velocities in Highly Scaled, Fully Depleted Silicon on Insulator Transistors
2021 · Yu-Hung Liao, Khandker Akif Aabrar, et al. · IEEE Electron Device Letters · 10
Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors
2023 · Omkar Phadke, Khandker Akif Aabrar, et al. · IEEE International Reliability Physics Symposium proceedings · 9
Total Ionizing Dose Effect in Tri-gate Silicon Ferroelectric Transistor Memory
2022 · Khandker Akif Aabrar, James Read, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
Direct Imaging of Asymmetric Interfaces and Electrostatic Potentials inside a Hafnia–Zirconia Ferroelectric Nanocapacitor
2024 · Daniel B. Durham, Manifa Noor, et al. · ACS Applied Materials & Interfaces · 8
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Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions
2024 · Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, et al. · IEEE International Reliability Physics Symposium proceedings · 7
Works count: 42
Citation count: 689
H-index: 15
I10-index: 21
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