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Carly Rogan

Observed names: C. Rogan, Rogan, Carly
ORCID: 0009-0006-5907-7872
Observed ORCID: 0009-0006-5907-7872
OpenAlex ID: A5071043001
Process integration and future outlook of 2D transistors
2023 · Kevin P. O’Brien, Carl H. Naylor, et al. · Nature Communications · 140
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Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering
2021 · K. P. O'Brien, C. J. Dorow, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 118
12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line
2024 · Hubert C. George, Mateusz T. Mądzik, et al. · Nano Letters · 67
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Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects
2022 · C. J. Dorow, A. Penumatcha, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 50
300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling
2022 · K. Maxey, C. H. Naylor, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 36
High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling
2023 · A. Penumatcha, K. P. O’Brien, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length
2024 · W. Mortelmans, P. Buragohain, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 25
Gate Oxide Module Development for Scaled GAA 2D FETs Enabling SS<75mV/d and Record Idmax>900μA/μm at Lg<50nm
2024 · W. Mortelmans, P. Buragohain, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
Low-voltage and high-speed switching of a magnetoelectric element for energy efficient compute
2022 · Punyashloka Debashis, John J. Plombon, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Ultra-High-k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p-Type High-Performance Transistors
2024 · Punyashloka Debashis, Hojoon Ryu, et al. · Nano Letters · 14
Threshold Voltage Control through Solvent Doping of Monolayer MoS2 Transistors
2025 · Kathryn Neilson, Charles Mokhtarzadeh, et al. · Nano Letters · 9
Record PMOS WSe2 GAA Performance Using Contact Planarization, and Systematic Exploration of Manufacturable, High-Yield Contacts
2025 · M. Jaikissoon, P. Buragohain, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 7
Magnetization switching and detection by PtxSn1−x alloys
2025 · Mahendra DC, Keita Sakuma, et al. · Applied Physics Reviews · 3
Correlation of TMD Defects with Device Performance in Ultra-Scaled Channels: Theoretical Insights and Experimental Observations
2024 · Lida Ansari, Andrey Vyatskikh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
Unconventional spin-to-charge conversion in MnPd3
2025 · Mahendra DC, Punyashloka Debashis, et al. · Applied Physics Letters · 2
Nanoscale molecular analysis with nano-projectile SIMS
2024 · Michael J. Eller, Brandon Holybee, et al. · Metrology, Inspection, and Process Control XXXVI
Low Melting Temperature Solder Interconnect Behavior and Thermal Cycling Performance Enhancement Using Edgebond
2020 · Tae-Kyu Lee, Carly Rogan, et al. · SMTA International
Works count: 20
Citation count: 533
H-index: 10
I10-index: 10
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