Author

Vincent D. Mattera

Observed names: V. D. JUN. MATTERA, V. D. MATTERA, V. D. Mattera, V. D. Mattera, Jr., V.D. Mattera

Observed institutions: AT&T (United States), University of Rhode Island, Brown University, Alcatel-Lucent (France), Nokia (United States)

OpenAlex ID: A5071153442

High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers

1990 · B. Tell, Y. H. Lee, et al. · Applied Physics Letters · 96

A far‐infrared study of ionic interactions in poly(styrene sulfonic acid) ionomers

1984 · Vincent D. Mattera, William M. Risen · Journal of Polymer Science Polymer Physics Edition · 39

Ga0.47In0.53As ultrahigh gain, high sensitivity photoconductors grown by chloride vapor-phase epitaxy

1986 · A. Antreasyan, P. A. Garbinski, et al. · Journal of Applied Physics · 36

Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers

1991 · Y.H. Lee, B. Tell, et al. · IEEE Photonics Technology Letters · 30

High Frequency Performance Of Planar InGaAs/InP Avalanche Photodiodes

1989 · J. N. Hollenhorst, D. T. Ekholm, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 28

Electro-optic sampling measurements of high-speed InP integrated circuits

1987 · J. M. Wiesenfeld, R. S. Tucker, et al. · Applied Physics Letters · 27

High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers

1990 · Y.H. Lee, B. Tell, et al. · Electronics Letters · 26

A kinetic study of the catalytic oxidation of carbon monoxide over Nafion-supported rhodium, ruthenium and platinum

1986 · Vincent D. Mattera, Denise M. Barnes, et al. · The Journal of Physical Chemistry · 22

Composition dependence of glass transition temperature of sulfonated‐polystrene ionomers

1986 · Vincent D. Mattera, William M. Risen · Journal of Polymer Science Part B Polymer Physics · 22

Chemistry of metals in ionomers: reactions of rhodium-PSSA with carbon monoxide, molecular hydrogen, and water

1984 · Vincent D. Mattera, Philip J. Squattrito, et al. · Inorganic Chemistry · 18

High-speed operation of InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy

1987 · A. Antreasyan, P. A. Garbinski, et al. · Applied Physics Letters · 16

High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxy

1989 · A. Antreasyan, P.A. Garbinski, et al. · IEEE Transactions on Electron Devices · 14

Monolithically integrated receiver front end: In/sub 0.53/Ga/sub 0.47/As p-i-n amplifier

1988 · C.-L. Cheng, R.P.H. Chang, et al. · IEEE Transactions on Electron Devices · 14

High-speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor-phase epitaxy

1986 · V. D. Mattera, F. Capasso, et al. · Journal of Applied Physics · 13

High bandwidth planar InP/InGaAs avalanche photodiodes

1988 · D.T. Ekholm, J.M. Geary, et al. · IEEE Transactions on Electron Devices · 12

High-speed enhancement mode InP metal-insulator-semiconductor field-effect transistors exhibiting very high transconductance

1986 · A. Antreasyan, P. A. Garbinski, et al. · Applied Physics Letters · 11

Monolithically integrated InGaAs-P-I-N InP-MISFET PINFET grown by chloride vapor phase epitaxy

1989 · A. Antreasyan, P.A. Garbinski, et al. · IEEE Photonics Technology Letters · 10

Evaluation of wash solutions as a preliminary step for copper and zinc determinations in hair

1981 · Vincent D. Mattera, Vincent A. Arbige, et al. · Analytica Chimica Acta · 9

Planar InP/InGaAsP three-dimensional graded-junction avalanche photodiode

1987 · Gou-Chung Chi, D.J. Muehlner, et al. · IEEE Transactions on Electron Devices · 8

Spectroscopic and Thermal Studies of Ionic Interactions in Ionomers

1986 · V. D. Mattera, S. L. Peluso, et al. · ACS symposium series · 8

Monolithically integrated enhancement-mode InP MISFET inverter

1986 · A. Antreasyan, P.A. Garbinski, et al. · Electronics Letters · 7

Deep-red (770 nm) continuous-wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers

1991 · Jeong Yong Lee, B. Tell, et al. · Conference on Lasers and Electro-Optics · 6

Monolithic InGaAs p-i-n InP metal-insulator-semiconductor field-effect transistor receiver for long-wavelength optical communications

1990 · V. D. Mattera, A. Antreasyan, et al. · Applied Physics Letters · 6

Safety and Environmental Control Systems Used in Chemical Vapor Deposition (CVD) Reactors at AT&T-Microelectronics—Reading

1989 · B. J. Rhoades, D. G. Sands, et al. · Applied Industrial Hygiene · 4

Gigahertz logic based on InP metal-insulator-semiconductor field-effect transistors by vapor phase epitaxy

1987 · A. Antreasyan, P.A. Garbinski, et al. · IEEE Transactions on Electron Devices · 4

Works count: 45

Citation count: 512

H-index: 13

I10-index: 17