Author

Hiroshi Ikenoue

Observed names: H Ikenoue, H. Ikenoue, HIROSHI IKENOUE, Hiroshi - Ikenoue, Ikenoue, Hiroshi

Institution: Kochi University of Technology

Observed institutions: Kyushu University, Japan Society for the Promotion of Science, Kochi University of Technology, Japan Science and Technology Agency, National Institute of Technology, Kochi College, Gigaphoton Inc (Japan), Innovation Academy of South China Sea Ecology and Environmental Engineering, Chinese Academy of Sciences, Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya University

ORCID: 0009-0006-9263-1935

Observed ORCIDs: 0009-0006-9263-1935, 0000-0002-2301-6019

OpenAlex ID: A5071209767

Pulse‐Width Dependence of the Cooling Effect on Sub‐Micrometer ZnO Spherical Particle Formation by Pulsed‐Laser Melting in a Liquid

2017 · Shota Sakaki, Hiroshi Ikenoue, et al. · ChemPhysChem · 48

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LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System

2018 · Tetsuya Goto, Kaori Saito, et al. · IEEE Transactions on Electron Devices · 44

Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters

2020 · M Ajmal Khan, Juan Paolo Bermundo, et al. · Nanotechnology · 42

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Large grain growth of Ge-rich Ge1−xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

2014 · Masashi Kurosawa, Noriyuki Taoka, et al. · Applied Physics Letters · 40

Influence of pulse frequency on synthesis of nano and submicrometer spherical particles by pulsed laser melting in liquid

2017 · Shota Sakaki, Hiroshi Ikenoue, et al. · Applied Surface Science · 33

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High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

2020 · Dianne C. Corsino, Juan Paolo S. Bermundo, et al. · ACS Applied Electronic Materials · 32

Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces

2020 · Eslam Abubakr, Abdelrahman Zkria, et al. · ACS Applied Materials & Interfaces · 28

Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

2013 · Akihiro Ikeda, Koji Nishi, et al. · Applied Physics Letters · 27

Effect of excimer laser annealing on a -InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

2015 · Juan Paolo Bermundo, Yasuaki Ishikawa, et al. · Journal of Physics D Applied Physics · 22

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Low-temperature (∼180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

2015 · Ryo Matsumura, Hironori Chikita, et al. · Applied Physics Letters · 21

Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution

2014 · Daichi Marui, Akihiro Ikeda, et al. · Japanese Journal of Applied Physics · 21

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High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water

2018 · Kouta Takahashi, Masashi Kurosawa, et al. · Applied Physics Letters · 20

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

2016 · Kenta Moto, Ryo Matsumura, et al. · Applied Physics Letters · 20

Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation

2019 · Eslam Abubakr, Abdelrahman Zkria, et al. · Diamond and Related Materials · 19

Investigation of the interface between LiNbO 3 and Si wafers bonded by laser irradiation

2017 · Ryo Takigawa, Hiroki Kawano, et al. · Japanese Journal of Applied Physics · 19

Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution

2013 · Koji Nishi, Akihiro Ikeda, et al. · Japanese Journal of Applied Physics · 19

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Formation of p-n+diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation

2022 · Eslam Abubakr, Shinya Ohmagari, et al. · Materials Research Letters · 18

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Laser-induced novel ohmic contact formation for effective charge collection in diamond detectors

2021 · Eslam Abubakr, Shinya Ohmagari, et al. · Materials Science in Semiconductor Processing · 17

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Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a-InGaZnO at 45 °C

2018 · Juan Paolo S. Bermundo, Yasuaki Ishikawa, et al. · ACS Applied Materials & Interfaces · 17

H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

2017 · Juan Paolo S. Bermundo, Yasuaki Ishikawa, et al. · Applied Physics Letters · 17

Patterned growth of ZnO nanowalls by nanoparticle-assisted pulsed laser deposition

2013 · Daisuke Nakamura, Tetsuya Shimogaki, et al. · Journal of Physics D Applied Physics · 17

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Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT Characteristics

2021 · Akira Mizutani, Fuminobu Hamano, et al. · IEEE Journal of the Electron Devices Society · 15

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Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition

2019 · Emmanuel Paneerselvam, Vinoth Kumar Lakshmi Narayanan, et al. · Journal of Electronic Materials · 15

Bonding of lithium niobate to silicon in ambient air using laser irradiation

2016 · Hiroki Kawano, Ryo Takigawa, et al. · Japanese Journal of Applied Physics · 15

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Ultraviolet lasing action in aligned ZnO nanowall

2015 · Kosuke Harada, Shihomi Nakao, et al. · Applied Physics B · 14

Works count: 231

Citation count: 866

H-index: 17

I10-index: 34