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Ryan G. Banal

100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
2010 · Takao Oto, Ryan G. Banal, et al. · Nature Photonics · 203
Optical anisotropy in [0001]-oriented AlxGa1−xN/AlN quantum wells (x>0.69)
2009 · R. G. Banal, M. Funato, et al. · Physical Review B · 189
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Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy
2008 · Ryan G. Banal, Mitsuru Funato, et al. · Applied Physics Letters · 107
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Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy
2015 · Yoshiya Iwata, Ryan G. Banal, et al. · Journal of Applied Physics · 87
Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters
2017 · J. W. Liu, M. Y. Liao, et al. · Journal of Applied Physics · 69
Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region
2011 · Ryan G. Banal, Mitsuru Funato, et al. · Applied Physics Letters · 58
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Homoepitaxy and Photoluminescence Properties of (0001) AlN
2012 · Mitsuru Funato, Kazuhisa Matsuda, et al. · Applied Physics Express · 52
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Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells
2014 · Ryan G. Banal, Yoshitaka Taniyasu, et al. · Applied Physics Letters · 47
Morphology and preferred orientation of Y2O3 film prepared by high-speed laser CVD
2006 · Takashi Goto, Ryan Banal, et al. · Surface and Coatings Technology · 46
Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy
2009 · Ryan G. Banal, Mitsuru Funato, et al. · Journal of Crystal Growth · 41
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Strong optical polarization in nonpolar (11¯00) Al x Ga 1−x N/AlN quantum wells
2013 · Mitsuru Funato, Kazuhisa Matsuda, et al. · Physical Review B · 30
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Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells
2015 · Yoshiya Iwata, Takao Oto, et al. · Journal of Applied Physics · 28
Characteristics of high Al‐content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy
2010 · Ryan G. Banal, Mitsuru Funato, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 28
Surface diffusion during metalorganic vapor phase epitaxy of AlN
2008 · Ryan G. Banal, Mitsuru Funato, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 27
Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors
2016 · Ryan G. Banal, Masataka Imura, et al. · Journal of Applied Physics · 26
Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel
2017 · Masataka Imura, Ryan G. Banal, et al. · Journal of Applied Physics · 24
Crack-Free Thick AlN Films Obtained by NH3 Nitridation of Sapphire Substrates
2013 · Ryan G. Banal, Yosuke Akashi, et al. · Japanese Journal of Applied Physics · 22
Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells
2015 · Mitsuru Funato, Ryan G. Banal, et al. · AIP Advances · 20
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Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal‐Organic Vapor Phase Epitaxy
2018 · Masataka Imura, Yuichi Ota, et al. · physica status solidi (a) · 19
Heteroepitaxy between wurtzite and corundum materials
2013 · Yuki Hayashi, Ryan G. Banal, et al. · Journal of Applied Physics · 19
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High Speed Deposition of Y2O3 Films by Laser-Assisted Chemical Vapor Deposition
2005 · Ryan Banal, Teiichi Kimura, et al. · MATERIALS TRANSACTIONS · 19
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Optical gain characteristics in Al-rich AlGaN/AlN quantum wells
2014 · Takao Oto, Ryan G. Banal, et al. · Applied Physics Letters · 13
Natural band alignment of BAlN and BGaN alloys
2022 · Yuichi Ota, Masataka Imura, et al. · Journal of Physics D Applied Physics · 11
Time‐resolved photoluminescence of Al‐rich AlGaN/AlN quantum wells under selective excitation
2011 · Yoshiya Iwata, Takao Oto, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6
Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy
2017 · Masataka Imura, Shunsuke Tsuda, et al. · Journal of Applied Physics · 5
Works count: 52
Citation count: 1,221
H-index: 19
I10-index: 23
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