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Herman Massler

Observed names: H. Massler, Massler, H.
OpenAlex ID: A5071911777
Millimeter-wave performance of chip interconnections using wire bonding and flip chip
2002 · T. Krems, W. Haydl, et al. · IEEE MTT-S International Microwave Symposium digest · 166
A simplified broad-band large-signal nonquasi-static table-based FET model
2000 · M. Fernandez-Barciela, P.J. Tasker, et al. · IEEE Transactions on Microwave Theory and Techniques · 64
A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure
2015 · Giuseppe Moschetti, Arnulf Leuther, et al. · IEEE Microwave and Wireless Components Letters · 37
Metamorphic H-Band Low-Noise Amplifier MMICs
2007 · A. Tessmann, A. Leuther, et al. · IEEE MTT-S International Microwave Symposium digest · 29
A Compact W-Band Dual-Channel Receiver Module
2006 · A. Tessmann, M. Kuri, et al. · IEEE MTT-S International Microwave Symposium digest · 28
Coplanar integrated mixers for 77-GHz automotive applications
1998 · L. Verweyen, H. Massler, et al. · IEEE Microwave and Guided Wave Letters · 17
A versatile and cryogenic mHEMT-model including noise
2010 · M. Seelmann-Eggebert, F. Schäfer, et al. · IEEE MTT-S International Microwave Symposium digest · 16
A 77 GHz GaAs pHEMT transceiver MMIC for automotive sensor applications
1999 · A. Tessmann, L. Verweyen, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 12
A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality
2016 · A. Tessmann, A. Leuther, et al. · IEEE MTT-S International Microwave Symposium digest · 10
Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
2005 · D. Wiegner, T. Merk, et al. · European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 · 8
First Full W-Band GaN Power Amplifier MMICs with Novel Broadband Radial Stubs and 50 GHz of Bandwidth
2018 · Maciej Cwiklinski, Christian Friesicke, et al. · IEEE MTT-S International Microwave Symposium digest · 7
Multibias scalable HEMT small-signal modeling based on a hybrid direct extraction/particle swarm optimization approach
2012 · Y. Campos-Roca, H. Massler, et al. · Microelectronics Journal · 7
Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
2003 · R. Kiefer, R. Quay, et al. · physica status solidi (a) · 6
Optimised gate-drain feedback capacitance ofW-band high gain passivated 0.15 µm InAlAs/InGaAs HEMTs
1998 · M. Chertouk, F. Steinhagen, et al. · Electronics Letters · 6
Low-Noise W-Band Amplifiers for Radiometer Applications Using a 70 nm Metamorphic HEMT Technology
2003 · Schwörer, C., Tessmann, A., et al. · 5
A coplanar 148 GHz cascode amplifier MMIC using 0.15 μm GaAs PHEMTs
2002 · A. Tessmann, O. Wohlgemuth, et al. · IEEE MTT-S International Microwave Symposium digest · 5
High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides
2005 · Bessemoulin, A., Fellon, P., et al. · AMS Acta (University of Bologna) · 4
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Robust GaN HEMT Low-Noise Amplifier MMICsfor X-Band Applications
2004 · D. Krausse, R. Quay, et al. · 2
W-band high gain passivated 0.15 /spl mu/m InP-based HEMTs MMIC technology with high thermal stability on InP substrates
1998 · M. Chertouk, F. Steinhagen, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 1
38/76 GHzGaAsPHEMTFREQUENCYDOUBLERSINCPW TECHNOLOGY
1998 · Y. Campos‐Roca, W. Marsetz, et al.
Compositionally graded buffers on GaAs as substrates for Al 0.48 In 0.52 As/Ga 0.47 In 0.53 As MODFETs.
1997 · Th. Fink, Matthias Haupt, et al. · Institute of physics conference series/Institute of Physics conference series
Works count: 24
Citation count: 430
H-index: 9
I10-index: 9
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