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Author

Sébastien Aroulanda

Observed name: S. Aroulanda
Institution: III V Lab
ORCID: 0009-0003-0116-3653
Observed ORCID: 0009-0003-0116-3653
OpenAlex ID: A5071962064
Cl2/Ar based atomic layer etching of AlGaN layers
2019 · Sébastien Aroulanda, Olivier Patard, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 21
V-Band Power Amplifier MMIC on InAlN/GaN/SiC HEMTs Technology
2023 · M. Bouslama, S. Piotrowicz, et al. · European Microwave Integrated Circuits Conference · 9
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE
2024 · Charles Pitaval, Sébastien Aroulanda, et al. · Applied Physics Letters · 5
V-Band InAlN/GaN/SiC MMIC Amplifier Embedded by Fan Out Wafer Level Packaging Technology
2025 · S. Piotrowicz, M. Bouslama, et al. · European Microwave Integrated Circuits Conference · 1
Co-intégration de HEMT GaN hyperfréquence normally-off avec des normally-on
2020 · Sébastien Aroulanda · theses.fr (ABES)
Composites of Skutterudites with Carbon Nano Tubes for Thermoelectric Energy Conversion
2015 · Andreas Schmitz, Carolin Schmid, et al. · elib (German Aerospace Center)
Works count: 7
Citation count: 36
H-index: 3
I10-index: 1
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