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Hubert Riedl

Dissipative preparation of the exciton and biexciton in self-assembled quantum dots on picosecond time scales
2014 · Per-Lennart Ardelt, Lukas Hanschke, et al. · Physical Review B · 103
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Electric-Susceptibility Hole Mass of Lead Telluride
1965 · Jack R. Dixon, H. R. Riedl · Physical Review · 101
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
2016 · T. Stettner, P. Zimmermann, et al. · Applied Physics Letters · 64
Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core–Multishell Nanowires
2018 · T. Stettner, A. Thurn, et al. · Nano Letters · 55
Free-Carrier Absorption in p -Type PbTe
1962 · H. R. Riedl · Physical Review · 55
Direct Coupling of Coherent Emission from Site-Selectively Grown III–V Nanowire Lasers into Proximal Silicon Waveguides
2017 · T. Stettner, T. Kostenbader, et al. · ACS Photonics · 48
Temperature Dependence of the Optical Absorption Edge of p -Type SnTe
1969 · J. Richard Burke, H. R. Riedl · Physical Review · 45
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
2016 · J. Treu, M. Speckbacher, et al. · Applied Physics Letters · 37
Optical Dispersion of Lead Sulfide in the Infrared
1965 · J. R. Dixon, H. R. Riedl · Physical Review · 37
Dispersion of the Refractive Index near the Fundamental Absorption Edge in PbS
1963 · H. R. Riedl, R. B. Schoolar · Physical Review · 36
Fundamental Absorption Edge of Tin Telluride
1965 · E. G. Bylander, J. R. Dixon, et al. · Physical Review · 27
Signatures of Dynamically Dressed States
2024 · Katarina Boos, Sang Kyu Kim, et al. · Physical Review Letters · 26
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Coherent Swing‐Up Excitation for Semiconductor Quantum Dots
2024 · Katarina Boos, Friedrich Sbresny, et al. · Advanced Quantum Technologies · 25
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Optical control of nonlinearly dressed states in an individual quantum dot
2016 · P.-L. Ardelt, M. Koller, et al. · Physical review. B./Physical review. B · 24
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Ferromagnetic Ge(Mn) nanostructures
2006 · S. Ahlers, D. Bougeard, et al. · Physica E Low-dimensional Systems and Nanostructures · 24
Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy
2020 · Daniel Ruhstorfer, Simon Mejia, et al. · Applied Physics Letters · 23
Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires
2018 · M. Sonner, J. Treu, et al. · Applied Physics Letters · 23
Role of twin defects on growth dynamics and size distribution of undoped and Si-doped GaAs nanowires by selective area epitaxy
2022 · Daniel Ruhstorfer, Markus Döblinger, et al. · Journal of Applied Physics · 21
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Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires
2016 · Bernhard Loitsch, Nari Jeon, et al. · Applied Physics Letters · 21
Preparation of epitaxial SnTe films of controlled carrier concentration
1966 · H.R. Riedl, R.B. Schoolar, et al. · Solid State Communications · 20
Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy
2020 · Daniel Ruhstorfer, Armin Lang, et al. · Nanotechnology · 19
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The electric-susceptibility hole mass and optical dielectric constant of SnTe
1965 · H.R. Riedl, J.R. Dixon, et al. · Solid State Communications · 19
Controlled tunneling-induced dephasing of Rabi rotations for high-fidelity hole spin initialization
2015 · P.-L. Ardelt, T. Simmet, et al. · Physical Review B · 18
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Correlated Chemical and Electrically Active Dopant Analysis in Catalyst-Free Si-Doped InAs Nanowires
2018 · Jonathan Becker, Megan O. Hill, et al. · ACS Nano · 17
Infrared detector materials
1981 · Hubert Riedl · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 16
Works count: 63
Citation count: 1,038
H-index: 20
I10-index: 29
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