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Hema Lata Rao Maddi

Observed name: Maddi, Hema Lata Rao
ORCID: 0000-0001-5064-8436
Observed ORCID: 0000-0001-5064-8436
OpenAlex ID: A5072354313
Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs
2023 · Shengnan Zhu, Limeng Shi, et al. · IEEE International Reliability Physics Symposium proceedings · 28
The Road to a Robust and Affordable SiC Power MOSFET Technology
2021 · Hema Lata Rao Maddi, Susanna Yu, et al. · Energies · 25
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Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs
2022 · Limeng Shi, Tianshi Liu, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 20
Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs
2022 · Shengnan Zhu, Tianshi Liu, et al. · Materials · 20
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Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET
2021 · Shengnan Zhu, Tianshi Liu, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 17
Non-isothermal simulation of SiC DMOSFET short circuit capability
2022 · Suvendu Nayak, Susanna Yu, et al. · Japanese Journal of Applied Physics · 7
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Design of the Drift Layer of 0.6 – 1.7 kV Power Silicon Carbide MOSFETs for Enhanced Short Circuit Withstand Time
2023 · Prashant Singh, Akshay K, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 4
Characterization of Near Conduction Band SiC/SiO 2 Interface Traps in Commercial 4H-SiC Power MOSFETs
2022 · Hema Lata Rao Maddi, Suvendu Nayak, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 4
Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
2025 · An Min Amanda Lee, Xin Yi Li, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2
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Silicon Carbide Dmosfet Design Adaptation for LOW Interface Trap Density
2024 · Akul Kumar Singh, Suvendu Nayak, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 2
Works count: 15
Citation count: 129
H-index: 6
I10-index: 5
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