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Niall Tumilty

Observed names: Tumilty, N, Tumilty, Niall
ORCID: 0000-0003-1212-3326
Observed ORCID: 0000-0003-1212-3326
OpenAlex ID: A5072372908
Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study
2010 · Mose Bevilacqua, Niall Tumilty, et al. · Journal of Applied Physics · 23
Undoped β-Ga 2 O 3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate
2024 · Chan-Hung Lu, Fu-Gow Tarntair, et al. · ACS Applied Electronic Materials · 20
Thermal stability, work function and Fermi level analysis of 2D multi-layered hexagonal boron nitride films
2023 · Shambel Abate Marye, Ravi Ranjan Kumar, et al. · Microelectronic Engineering · 19
Comparison of performance in GaN-HEMTs on thin SiC substrate and sapphire substrates
2024 · Tsung Po Chuang, Niall Tumilty, et al. · Chinese Journal of Physics · 18
Electronic properties of homoepitaxial (111) highly boron-doped diamond films
2008 · Haitao Ye, Niall Tumilty, et al. · Journal of Applied Physics · 18
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Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition
2024 · Fu‐Gow Tarntair, Chih‐Yang Huang, et al. · Advanced Electronic Materials · 15
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β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD
2023 · Chan-Hung Lu, Fu-Gow Tarntair, et al. · Discover Nano · 15
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Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition
2023 · Ray-Hua Horng, Apoorva Sood, et al. · Materials Today Advances · 15
Performance Improvement of Enhanced-Mode β-Ga 2 O 3 MOSFETs by Partial Gate Recess Structure
2024 · Yueh-Han Chuang, Fu-Gow Tarntair, et al. · ACS Applied Electronic Materials · 14
Synthesis of carbon nanotubes on single crystal diamond
2010 · Niall Tumilty, Lesya Kasharina, et al. · Carbon · 14
Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies
2024 · Chih-Yang Huang, Xin-Ying Tsai, et al. · Materials Today Advances · 13
Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates
2023 · Apoorva Sood, Dong-Sing Wuu, et al. · Materials Today Advances · 13
Multiple conduction paths in boron δ-doped diamond structures
2009 · Niall Tumilty, Joseph Welch, et al. · Applied Physics Letters · 13
AC conductivity of hBN thin film on Si(111): A high temperature study
2022 · Hao Le Thi, Shambel Abate Marye, et al. · Journal of Applied Physics · 9
A hBN/Ga2O3 pn junction diode
2024 · Shambel Abate Marye, Xin-Ying Tsai, et al. · Scientific Reports · 8
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Advanced Li–S Battery Configuration Featuring Sulfur‐Coated Separator and Interwoven rGO/CNT Fabric Current Collector
2024 · Kuan‐Cheng Chiu, Asif Latief Bhat, et al. · Small · 6
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An impedance spectroscopic investigation of the electrical properties of δ-doped diamond structures
2009 · Niall Tumilty, Joseph Welch, et al. · Journal of Applied Physics · 4
Electrical properties and evaluation of band tail states in Mg doped p-type multilayer hBN
2024 · Shambel Abate Marye, Ravi Ranjan Kumar, et al. · Journal of Applied Physics · 3
Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors
2026 · Apu Das, Agniva Paul, et al. · ACS Applied Materials & Interfaces · 2
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Carrier transport properties of a SiC metal insulator semiconductor Schottky diode with a boron nitride layer
2025 · Ravi Ranjan Kumar, Shambel Abate Marye, et al. · Journal of Applied Physics · 2
Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates
2023 · Ray-Hua Horng, Hsiao-Yun Yeh, et al. · Electronics · 2
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Nanodiamond-gated diamond field-effect transistor for chemical sensing using hydrogen-induced transfer doping for channel formation
2010 · Rezal K. Ahmad, Ana Carolina Parada, et al. · Applied Physics Letters · 2
Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST)
2025 · Yu-Ting Chuang, Niall Tumilty, et al. · Micromachines · 1
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Author Correction: A hBN/Ga2O3 pn junction diode
2024 · Shambel Abate Marye, Xin-Ying Tsai, et al. · Scientific Reports · 1
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Diamond based nanostructures for electronic applications
2010 · Niall Tumilty · UCL Discovery (University College London) · 1
Works count: 39
Citation count: 252
H-index: 13
I10-index: 13
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