Author

Oleg Rusch

Observed names: O Rusch, O. Rusch, Rusch, O., Rusch, Oleg

Institution: Fraunhofer Institute for Integrated Systems and Device Technology

Observed institution: Fraunhofer Institute for Integrated Systems and Device Technology

ORCID: 0009-0009-4276-5785

Observed ORCID: 0009-0009-4276-5785

OpenAlex ID: A5072634977

Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC

2020 · Carsten Hellinger, Oleg Rusch, et al. · Materials science forum · 12

Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology

2020 · Oleg Rusch, Carsten Hellinger, et al. · Materials science forum · 12

Highly Efficient Floating Field Rings for SiC Power Electronic Devices - A Systematic Experimental Study

2023 · Lirong Z. Broderick, Jonathan Moult, et al. · Key engineering materials · 7

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Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask

2024 · Oleg Rusch, Kevin Brueckner, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 5

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Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope

2024 · Masanobu Yoshikawa, Masataka Murakami, et al. · Journal of Raman Spectroscopy · 5

Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization

2024 · Tom Becker, Carsten Hellinger, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1

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Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC

2024 · Kevin Brueckner, Oleg Rusch · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1

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Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC

2024 · Julien Koerfer, Mathias Rommel, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1

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A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation

2023 · Minwho Lim, Constantin Csato, et al. · Key engineering materials · 1

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Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes

2019 · Oleg Rusch, Jonathan Moult, et al. · Materials science forum · 1

Optical Critical Dimension Metrology for the SiC Trench MOSFET Process

2026 · Boglárka Dikó, Oleg Rusch, et al. · Key engineering materials

Applying atomic layer etching for enhanced SiC-based photonic devices

2026 · M. Siebert, T. Bi, et al. · Integrated Photonics Platforms

Optical Critical Dimension Metrology for the SiC Trench MOSFET Process

2026 · Dikó, Boglárka, Rusch, Oleg, et al. · Fraunhofer-Publica (Fraunhofer-Gesellschaft)

Surface damage layer investigation of silicon carbide wafers by Mueller matrix spectroscopy

2025 · B Dikó, E Balogh, et al.

Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC

2024 · Alesa Fuchs, Kevin Brueckner, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

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SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

2024 · Guiot, Eric, Allibert, Frédéric, et al. · Fraunhofer-Publica (Fraunhofer-Gesellschaft)

Works count: 28

Citation count: 46

H-index: 5

I10-index: 2