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Hussein Mehdi

Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing
2020 · Maxime Legallais, Hussein Mehdi, et al. · ACS Applied Materials & Interfaces · 43
Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering
2018 · A. Bachar, A. Bousquet, et al. · Applied Surface Science · 29
Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide
2017 · H. Mehdi, G. Monier, et al. · Applied Surface Science · 26
AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth
2021 · Claire Besancon, Delphine Néel, et al. · Applied Sciences · 24
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Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
2019 · H. Mehdi, F. Réveret, et al. · Applied Surface Science · 12
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Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode
2021 · H. Mehdi, F. Réveret, et al. · Applied Surface Science · 11
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
2020 · Yamina André, Nebile Isik Goktas, et al. · Nano Express · 11
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Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers
2020 · H. Mehdi, M. Martin, et al. · AIP Advances · 10
Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers
2021 · H. Mehdi, M. Martin, et al. · AIP Advances · 9
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O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate
2020 · Oumaima Abouzaid, Hussein Mehdi, et al. · Nanomaterials · 9
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Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process
2021 · Arslane Hatem Kacha, Macho Anani, et al. · Journal of Alloys and Compounds · 8
DFT and experimental FTIR investigations of early stages of (0 0 1) and (1 1 1)B GaAs surface nitridation
2018 · Guillaume Monier, Philip E. Hoggan, et al. · Applied Surface Science · 6
III-V Heterostructure Grown on 300mm Ge/Si Wafer for Large-Scale Fabrication of Red μ-LEDs
2022 · P. Gaillard, A. Ndiaye, et al. · IEEE Photonics Technology Letters · 2
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III-V monolithic integration for optoelectronic devices and new developments on 2D materials
2023 · T. Baron, V. Letka, et al. · IEEE Nanotechnology Materials and Devices Conference (NMDC)
AlGaInAs Multi-Quantum Well Laser Array on Silicon Achieved by InP-Seed-Bonding and MOVPE Selective Area Growth
2022 · Claire Besancon, Nicolas Vaissiere, et al. · Compound Semiconductor Week (CSW)
Red Al0.3Ga0.7As/GaAs LED directly grown on 300 mm silicon wafers
2022 · Pauline Gaillard, Amade Ndiaye, et al. · Light-Emitting Devices, Materials, and Applications
Toward optimum N2 plasma nitriding process for GaAs(100) surface passivation
2019 · Mehdi, Hussein, Robert-Goumet, Christine, et al. · HAL
Passivation de surfaces GaAs(100) par plasma N2 à faible puissance. Mise en évidence de la diffusion de l’azote et de l’arsenic par modélisation de signaux AR-XPS
2019 · Robert-Goumet, Christine, Monier, G., et al. · HAL
Etude de la passivation du GaAs(100) par nitruration par plasma N2 sous ultra-vide
2018 · Hussein Mehdi · theses.fr (ABES)
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N2 plasma passivation of GaAs (100) surfaces and air exposure study of GaN/GaAs structures by XPS, LEED, pAR-XPS and PL measurements
2018 · Mehdi, H., Monier, G., et al. · HAL
Works count: 20
Citation count: 200
H-index: 9
I10-index: 8
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