Author

S. Tata

Observed names: S Tata, Sudhakar Tata

Observed institutions: Solid State Physics Laboratory, University of Sciences and Technology Houari Boumediene

OpenAlex ID: A5073725889

Total emissivity of silicon at high temperatures

1971 · S C Jain, S K Agarwal, et al. · Journal of Physics D Applied Physics · 18

The annealing temperature effect on the electrical properties of boron‐doped hydrogenated amorphous silicon a‐Si:H(B)

2010 · N. Khelifati, S. Tata, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 9

Silicon crystals almost free of dislocations

1971 · W.N. Borle, S. Tata, et al. · Journal of Crystal Growth · 9

Report on the Work on Growth of Semiconductor Grade Silicon Single Crystals

1968 · W. N. Borle, Sudhakar Tata, et al. · IETE Journal of Research · 1

海洋応用のためのMach‐Zehnder干渉計に基づく高感度水塩分センサ【Powered by NICT】

2016 · Kumari C. R. Uma, Samiappan Dhanalakshmi, et al. · IEEE Conference Proceedings

On Silicon Single Crystal Growth by Czochralski Method

1970 · W. N. Borle, S. Tata, et al. · IETE Journal of Research

Works count: 6

Citation count: 37

H-index: 3

I10-index: 1