Author

Pouya Valizadeh

Observed names: P Valizadeh, P. Valizadeh, Valizadeh, Pouya

Institution: Ferdowsi University of Mashhad

Observed institutions: West Virginia University, University of Tehran, University of Michigan, Concordia University, Ferdowsi University of Mashhad

ORCID: 0000-0002-4809-6617

Observed ORCID: 0000-0002-4809-6617

OpenAlex ID: A5074062539

Investigation of the Impact of Al Mole-Fraction on the Consequences of RF Stress on $hbox Al_xhbox Ga_1-xhbox N/GaN$ MODFETs

2005 · P. Valizadeh, D. Pavlidis · IEEE Transactions on Electron Devices · 53

Effects of RF and DC stress on AlGaN/GaN MODFETs: a low-frequency noise-based investigation

2005 · P. Valizadeh, D. Pavlidis · IEEE Transactions on Device and Materials Reliability · 46

Reverse Gate-Current of AlGaN/GaN HFETs: Evidence of Leakage at Mesa Sidewalls

2016 · Hassan Rahbardar Mojaver, Pouya Valizadeh · IEEE Transactions on Electron Devices · 27

Fin- and Island-Isolated AlGaN/GaN HFETs

2011 · Pouya Valizadeh, Bandar AlOtaibi · IEEE Transactions on Electron Devices · 20

Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors

2017 · Hassan Rahbardar Mojaver, Jean-Lou Gosselin, et al. · Journal of Applied Physics · 14

Analytical Modeling of Current Collapse in AlGaN/GaN HFETs According to the Virtual Gate Concept

2010 · Maziar Moradi, Pouya Valizadeh · IEEE Transactions on Device and Materials Reliability · 14

High-Temperature Very Low Frequency Noise-Based Investigation of Slow Transients in AlGaN/GaN MODFETs

2008 · P. Valizadeh · IEEE Transactions on Device and Materials Reliability · 14

Characterization and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs

2003 · S.S.H. Hsu, P. Valizadeh, et al. · IEEE Lester Eastman Conference on High Performance Devices · 14

Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs

2003 · S.S.H. Hsu, P. Valizadeh, et al. · 14

AlGaN/GaN high electron mobility transistor (HEMT) reliability

2005 · Pavlidis, Dimitris, Valizadeh, Pouya, et al. · AMS Acta (University of Bologna) · 12

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Influence of transferred-electron effect on drain-current characteristics of AlGaN/GaN heterostructure field-effect transistors

2011 · Maziar Moradi, Pouya Valizadeh · Journal of Applied Physics · 11

Drain-Bias-Dependent Study of Reverse Gate-Leakage Current in AlGaN/GaN HFETs

2021 · Iqbal Preet Singh, Hassan Rahbardar Mojaver, et al. · IEEE Transactions on Electron Devices · 10

Analytical modelling of drain-current characteristics of AlGaN/GaN HFETs with full incorporation of steady-state velocity overshoot

2011 · Alireza Loghmany, Pouya Valizadeh · Journal of Physics D Applied Physics · 10

Determination of subband energies and 2DEG characteristics of AlxGa1−xN/GaN heterojunctions using variational method

2014 · Farzin Manouchehri, Pouya Valizadeh, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 9

Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs: Realistic Assessment of Fowler–Nordheim and Leakage at Mesa Sidewalls

2018 · Hassan Rahbardar Mojaver, Pouya Valizadeh · IEEE Transactions on Electron Devices · 8

Field Effect Transistors, A Comprehensive Overview

2016 · Pouya Valizadeh · Wiley eBooks · 8

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

2018 · Jean-Lou Gosselin, Pouya Valizadeh · IEEE Transactions on Electron Devices · 7

Low frequency noise - based monitoring of the effects of RF and DC stress on AlGaN/GaN MODFETs

2003 · Pouya Valizadeh, Dimitris Pavlidis · 7

Investigation of the High-Temperature Operation of AlGaN/GaN HFETs via Studying the Impact of Temperature Dependency of Drift Transport Characteristics

2012 · B. AlOtaibi, P. Valizadeh · IEEE Transactions on Device and Materials Reliability · 5

Low-Frequency Noise-Based Degradation Prediction of $hboxAl_xhboxGa_1 - xhboxN/GaN$ MODFETs

2006 · P. Valizadeh, D. Pavlidis · IEEE Transactions on Device and Materials Reliability · 5

A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs

2024 · Yatexu Patel, Pouya Valizadeh · IEEE Journal of the Electron Devices Society · 4

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Correlation between sidewall surface states and off-state breakdown voltage of AlGaN/GaN HFETs

2021 · Mehrnegar Aghayan, Pouya Valizadeh · Journal of Applied Physics · 4

Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs

2014 · Alireza Loghmany, Pouya Valizadeh · Solid-State Electronics · 4

Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET

2006 · Pouya Valizadeh, Egor Alekseev, et al. · Solid-State Electronics · 4

Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects

2005 · Pouya Valizadeh, Dimitris Pavlidis, et al. · Solid-State Electronics · 4

Works count: 49

Citation count: 359

H-index: 11

I10-index: 13