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Gowri Kamarthy

Observed name: G. Kamarthy
ORCID: 0009-0008-0824-4452
Observed ORCID: 0009-0008-0824-4452
OpenAlex ID: A5074350090
Progress report on high aspect ratio patterning for memory devices
2023 · Meihua Shen, Thorsten Lill, et al. · Japanese Journal of Applied Physics · 54
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The influence of post-etch InGaAs fin profile on electrical performance
2014 · Tsvetan Ivanov, Mohammad Ali Pourghaderi, et al. · Japanese Journal of Applied Physics · 10
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Patterning in the era of atomic scale fidelity
2015 · Thorsten Lill, Samantha Tan, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 9
Enabling High Aspect Ratio 3D NAND Scaling through Deposition and Etch Co-Optimization (DECO)
2022 · Meihua Shen, John Hoang, et al. · ECS Meeting Abstracts · 3
A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
2012 · Guang Yaw Hwang, J.H. Liao, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2
New generations of tools sets that enable FDSOI and 3-D tri-gate technologies
2012 · R. Arghavani, S. Deshmukh, et al. · International Workshop on Junction Technology · 1
Continuous Innovation in Plasma Etch Paves the Way to Our Artificial Intelligence-Driven Future [Women in Electronic Devices]
2025 · Gowri Kamarthy · IEEE Electron Devices Magazine
Plasma etch solutions for EUV patterning: defect challenges
2021 · Noel Sun, Naveed Ansari, et al. · Extreme Ultraviolet (EUV) Lithography
The Influence of Post-Etch InGaAs Fin Profile on Electrical Performance
2015 · Ts. Ivanov, A. Pourghaderi, et al. · International Conference on Solid State Devices and Materials (SSDM)
Plasma Etch in the Era of Atomic Scale Fidelity
2014 · Thorsten Lill, Harmeet Singh, et al. · ECS Meeting Abstracts
FinFET Metal Gate Hi-k Etch for sub-32nm technology
2009 · Gowri Kamarthy, G. Q. Lo, et al.
Works count: 11
Citation count: 79
H-index: 3
I10-index: 2
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