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Hitoshi Kunitake

Observed names: H. Kunitake, Hitoshi - Kunitake
ORCID: 0000-0003-1187-4590
Observed ORCID: 0000-0003-1187-4590
OpenAlex ID: A5074394648
High thermal tolerance of 25-nm c-axis aligned crystalline In-Ga-Zn oxide FET
2018 · Hitoshi Kunitake, Kazuaki Ohshima, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 45
A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications
2019 · Hitoshi Kunitake, Ryo Arasawa, et al. · IEEE Journal of the Electron Devices Society · 43
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Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence
2019 · Shunpei Yamazaki, Satoru Ohshita, et al. · International Journal of Ceramic Engineering & Science · 33
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5,291‐ppi OLED display enabled by monolithic integration of C‐axis‐aligned crystalline IGZO FET and Si CMOS
2022 · Kiyoshi Kato, Hidetomo Kobayashi, et al. · Journal of the Society for Information Display · 21
Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology
2021 · H. Baba, S. Ohshita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
P‐130: 3207‐ppi, 1.50‐in. OLED Microdisplay with All Pixels Formed Through RGB Side‐by‐Side Patterning by Photolithography
2023 · Yasumasa Yamane, Nozomu Sugisawa, et al. · SID Symposium Digest of Technical Papers · 14
10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
2022 · Toshihiko Saito, Toshiki Mizuguchi, et al. · SID Symposium Digest of Technical Papers · 14
1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
2024 · Takeya Hirose, Yuki Okamoto, et al. · IEEE Journal of the Electron Devices Society · 13
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1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS
2023 · Y. Okamoto, Y. Komura, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 13
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM
2023 · Naomi Yazaki, Ryosuke Motoyoshi, et al. · IEEE Journal of the Electron Devices Society · 12
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32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
2022 · Munehiro Kozuma, Yuki Okamoto, et al. · SID Symposium Digest of Technical Papers · 12
5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS
2021 · Kiyoshi Kato, Hidetomo Kobayashi, et al. · Proceedings of the International Display Workshops · 9
C-axis aligned crystalline indium–gallium–zinc oxide ceramics and oxide semiconductor LSI as countermeasures against global warming
2022 · Shunpei Yamazaki, Kiyoshi Kato, et al. · Ceramics International · 8
27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays
2022 · Ryota Hodo, Satoru Saito, et al. · SID Symposium Digest of Technical Papers · 8
32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display
2022 · Yutaka Okazaki, Hiromi Sawai, et al. · SID Symposium Digest of Technical Papers · 7
Characteristics and Applications of CAAC-IGZO FET with Gate Length of 13nm
2020 · Akio Suzuki, Yanagisawa Yuichi, et al. · ECS Transactions · 7
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Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM
2024 · Hiroki Inoue, Takeya Hirose, et al. · IEEE International Memory Workshop (IMW) · 6
A c-axis aligned crystalline IGZO FET and a 0.06-μm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
2022 · M. Endo, S. Numata, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
High-temperature Electrical Characteristics of 60nm CAAC-IGZO FET : Comparison with Si FET
2018 · H. Kunitake, S. Ohshita, et al. · International Conference on Solid State Devices and Materials (SSDM) · 6
OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers
2024 · Munehiro Kozuma, Yusuke Komura, et al. · IEEE Journal of the Electron Devices Society · 5
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(Invited) Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI
2021 · Hitoshi Kunitake, Haruyuki Baba, et al. · ECS Transactions · 5
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Hydrogen Absorption Method Using HfOx in Crystalline In-Ga-Zn Oxide FETs for NVM Applications
2020 · T. Ono, Y. Yanagisawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm
2023 · Masashi Oota, Toshiki Hamada, et al. · International Conference on Solid State Devices and Materials (SSDM) · 4
Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET
2024 · Hiromi Sawai, Motomu Kurata, et al. · Japanese Journal of Applied Physics · 3
Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit
2023 · Hiromi Sawai, Motomu Kurata, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3
Works count: 56
Citation count: 347
H-index: 11
I10-index: 11
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