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Stephen K. O’Leary

Observed names: O’Leary, Stephen K., S. K. O'Leary, S. K. O'leary, S. K. O’Leary, S.K O'Leary, S.K. O'Leary, S.K. O’Leary, Stephen K O'Leary, Stephen K. O'Leary, Stephen Karrer O'Leary, Stephen Karrer O’Leary, Stephen O'Leary, Stephen OʼLeary
Observed institutions: Hong Kong Baptist University, University of British Columbia, Rensselaer Polytechnic Institute, University of Toronto, University of Regina, University of Saskatchewan, University of British Columbia, Okanagan Campus, University of Windsor
ORCID: 0000-0002-7511-7559
Observed ORCID: 0000-0002-7511-7559
OpenAlex ID: A5074782371
Transient electron transport in wurtzite GaN, InN, and AlN
1999 · Brian E. Foutz, Stephen K. O’Leary, et al. · Journal of Applied Physics · 561
The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis
1997 · Stephen K. O’Leary, S. R. Johnson, et al. · Journal of Applied Physics · 311
Electron transport in wurtzite indium nitride
1998 · Stephen K. O’Leary, Brian E. Foutz, et al. · Journal of Applied Physics · 292
Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review
2006 · Stephen K. O'Leary, Brian E. Foutz, et al. · Journal of Materials Science Materials in Electronics · 150
Potential performance of indium-nitride-based devices
2006 · Stephen K. O’Leary, Brian E. Foutz, et al. · Applied Physics Letters · 96
Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis
2005 · Stephen K. O’Leary, Brian E. Foutz, et al. · Applied Physics Letters · 89
The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots
2007 · Tat M. Mok, Stephen K. O’Leary · Journal of Applied Physics · 86
Disorder and optical absorption in amorphous silicon and amorphous germanium
1997 · Stephen K. O'Leary, Stefan Zukotynski, et al. · Journal of Non-Crystalline Solids · 82
Auger-Limited Carrier Recombination and Relaxation in CdSe Colloidal Quantum Wells
2015 · Erfan Baghani, Stephen K. O’Leary, et al. · The Journal of Physical Chemistry Letters · 81
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Monte Carlo simulation of electron transport in wurtzite aluminum nitride
1998 · Stephen K. O'Leary, Brian E. Foutz, et al. · Solid State Communications · 78
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Flexible High‐Performance Photovoltaic Devices based on 2D MoS2 Diodes with Geometrically Asymmetric Contact Areas
2022 · Amin Abnavi, Ribwar Ahmadi, et al. · Advanced Functional Materials · 68
On determining the optical gap associated with an amorphous semiconductor: A generalization of the Tauc model
1997 · Stephen K. O'Leary, P.K. Lim · Solid State Communications · 67
Nonmonotonic Dependence of Auger Recombination Rate on Shell Thickness for CdSe/CdS Core/Shell Nanoplatelets
2017 · Matthew Pelton, Jordan J. Andrews, et al. · Nano Letters · 59
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Semiclassical density-of-states and optical-absorption analysis of amorphous semiconductors
1995 · Stephen K. O’Leary, Stefan Zukotynski, et al. · Physical review. B, Condensed matter · 59
Optical absorption in amorphous semiconductors
1995 · Stephen K. O’Leary, Stefan Zukotynski, et al. · Physical review. B, Condensed matter · 57
Optical absorption, disorder, and the disorderless limit in amorphous semiconductors
1998 · Stephen Karrer O’Leary · Applied Physics Letters · 44
Disorder and the optical properties of amorphous silicon grown by molecular beam epitaxy
2001 · B.J Fogal, S.K O'Leary, et al. · Solid State Communications · 40
The dependence of the Fermi level on temperature, doping concentration, and disorder in disordered semiconductors
2000 · Thanh H. Nguyen, Stephen K. O’Leary · Journal of Applied Physics · 40
Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review
2014 · Walid A. Hadi, Michael S. Shur, et al. · Journal of Materials Science Materials in Electronics · 39
A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review
2015 · Poppy Siddiqua, Walid A. Hadi, et al. · Journal of Materials Science Materials in Electronics · 38
Recombination of drifting holes with trapped electrons in stabilized a-Se photoconductors: Langevin recombination
2004 · S. O. Kasap, Bud Fogal, et al. · Applied Physics Letters · 37
An analytical density of states and joint density of states analysis of amorphous semiconductors
2004 · Stephen Karrer O’Leary · Journal of Applied Physics · 36
An empirical density of states and joint density of states analysis of hydrogenated amorphous silicon: a review
2004 · Stephen Karrer O'Leary · Journal of Materials Science Materials in Electronics · 36
A simplified joint density of states analysis of hydrogenated amorphous silicon
2002 · Stephen K. O’Leary, Saad M. Malik · Journal of Applied Physics · 36
Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis
2003 · Stephen K. O’Leary, Brian E. Foutz, et al. · Journal of Electronic Materials · 35
Works count: 158
Citation count: 3,799
H-index: 32
I10-index: 76
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