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K. D. Mynbaev

Observed names: K D Mynbaev, K Mynbaev, K. Mynbaev, K.D Mynbaev, K.D. Mynbaev, K.D. Mynbaeva, Karim D. Mynbaev, Karim J. Mynbaev, Karim Mynbaev, Mynbaev K. D., Mynbaev, K.D., Mynbaev, K.D., Mynbaev, Karim, К.Д. Мынбаев, Мынбаев Карим Джафарович, Мынбаев, Карим Джафарович
Observed institutions: Russian Academy of Sciences, ITMO University, National Research Tomsk State University, Lviv University, Institute of Electrical and Electronics Engineers, Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics, Ioffe Institute
ORCID: 0000-0002-9853-8874
Observed ORCID: 0000-0002-9853-8874
OpenAlex ID: A5075207363
Structural characterization and strain relaxation in porous GaN layers
2000 · M. Mynbaeva, A. Titkov, et al. · Applied Physics Letters · 94
Strain relaxation in GaN layers grown on porous GaN sublayers
1999 · M. Mynbaeva, A. Titkov, et al. · MRS Internet Journal of Nitride Semiconductor Research · 55
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Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates
2001 · M. Mynbaeva, S. E. Saddow, et al. · Applied Physics Letters · 41
Modification of Hg1−x CdxTe properties by low-energy ions
2003 · K. D. Mynbaev, V. I. Ivanov-Omskii · Semiconductors · 38
Photoconductivity in Porous GaN Layers
2001 · M. Mynbaeva, N. Bazhenov, et al. · physica status solidi (b) · 28
Doping of epitaxial layers and heterostructures based on HgCdTe
2006 · K. D. Mynbaev, V. I. Ivanov-Omskiĭ · Semiconductors · 26
Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates
2016 · I.I. Izhnin, A.V. Voitsekhovsky, et al. · Infrared Physics & Technology · 23
Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates
2012 · I I Izhnin, A I Izhnin, et al. · Semiconductor Science and Technology · 23
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Photoluminescence of Hg1 − x Cd x Te based heterostructures grown by molecular-beam epitaxy
2011 · K. D. Mynbaev, N. L. Bazhenov, et al. · Semiconductors · 21
Hg1-xCdxTe doping by ion-beam treatment
1993 · V I Ivanov-Omskii, K E Mironov, et al. · Semiconductor Science and Technology · 21
High-temperature diffusion doping of porous silicon carbide
2008 · M. G. Mynbaeva, E. N. Mokhov, et al. · Technical Physics Letters · 20
HVPE GaN growth on porous SiC with closed surface porosity
2007 · M. Mynbaeva, A. Sitnikova, et al. · Journal of Crystal Growth · 20
Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis
2019 · I.I. Izhnin, K.D. Mynbaev, et al. · Infrared Physics & Technology · 17
Spontaneous and stimulated emission in InAsSb-based LED heterostructures
2017 · K.D. Mynbaev, N.L. Bazhenov, et al. · Infrared Physics & Technology · 17
Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic
2014 · I. I. Izhnin, S. A. Dvoretsky, et al. · Journal of Applied Physics · 17
Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling
2009 · M Pociask, I I Izhnin, et al. · Semiconductor Science and Technology · 17
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Conductivity type conversion in ion-milled p-HgCdTe:As heterostructures grown by molecular beam epitaxy
2007 · I. I. Izhnin, S. A. Dvoretsky, et al. · Applied Physics Letters · 17
The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe
2005 · V V Bogoboyashchyy, I I Izhnin, et al. · Semiconductor Science and Technology · 17
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Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors
2006 · V V Bogoboyashchyy, I I Izhnin, et al. · Semiconductor Science and Technology · 16
Luminescence of II–VI and III–V nanostructures
2017 · K.D. Mynbaev, A.V. Shilyaev, et al. · Opto-Electronics Review · 15
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Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study
2018 · O. Yu. Bonchyk, H. V. Savytskyy, et al. · Applied Nanoscience · 14
HVPE homo-epitaxial growth of GaN on porous substrates
2013 · M. G. Mynbaeva, A. E. Nikolaev, et al. · CrystEngComm · 14
Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies
2017 · I.I. Izhnin, K.D. Mynbaev, et al. · Opto-Electronics Review · 13
Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal
2007 · V. V. Bogoboyashchyy, I. I. Izhnin, et al. · Semiconductors · 13
Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy
2008 · M Pociask, I I Izhnin, et al. · Semiconductor Science and Technology · 12
Works count: 200
Citation count: 1,145
H-index: 17
I10-index: 35
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