Get started
Author

Rolf W. Michelmann

Observed names: Michelmann, R., R. Michelmann, R. W. Michelmann, R.W Michelmann, R.W. Michelmann
OpenAlex ID: A5075256047
Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers
2000 · H. Ch. Alt, A. Yu. Egorov, et al. · Applied Physics Letters · 52
Excitation functions for the reactions 10B(d, n)11C and 12C(d, n)13N for charged particle activation analysis
1990 · R.W. Michelmann, J. Krauskopf, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 39
Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)
1994 · A. Markwitz, H. Baumann, et al. · Applied Physics A · 28
Boron detection using the nuclear reaction 11B(p, α)2α
1996 · M. Vollmer, J.D. Meyer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 25
Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy
2001 · H.Ch Alt, A.Yu Egorov, et al. · Physica B Condensed Matter · 24
Analysis of Electrically Active Carbon in Semi-insulating Gallium Arsenide by Infrared Absorption Spectroscopy
1999 · H. Ch. Alt, B. Wiedemann, et al. · Japanese Journal of Applied Physics · 12
Determination of nitrogen in semiconductor materials using the 14N(p, α)11C and 14N(d, n)15O nuclear reactions
1990 · F. Köhl, J. Krauskopf, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 12
Nuclear reaction channeling
1995 · J.D. Meyer, R.W. Michelmann, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 10
Investigation of the electronic energy loss of light ions for materials analysis
1994 · J.D. Meyer, R.W. Michelmann, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 9
Localization and mobility of oxygen in monocrystalline GaAs by channeling-NRA
1994 · H. Hebert, Th. Schenkel, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 8
Layer and interface analysis of ultra thin ion beam produced silicon nitride layers by NRA and TEM
1996 · A. Markwitz, S. Klein, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 7
Channeling charged particle activation analysis of light impurities at trace levels in GaAs
1994 · Th. Schenkel, H. Hebert, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 7
Spark source mass spectrometric calibration of the local vibrational mode absorption of carbon in gallium arsenide on arsenic sublattice sites
1999 · B. Wiedemann, H. Ch. Alt, et al. · Fresenius Journal of Analytical Chemistry · 6
Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation
1997 · Andreas Markwitz, Horst Baumann, et al. · Microchimica Acta · 6
Computer simulation of channeling in Si and GaAs crystals
1995 · F. Ditrói, J.D. Meyer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
Investigation of ultra thin SiN O layers produced by low-energy ion implantation with NRA and channeling-RBS
1996 · R.W. Michelmann, H. Baumann, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 5
Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiO x and SiN x O y layers
1995 · R. W. Michelmann, H. Baumann, et al. · Analytical and Bioanalytical Chemistry · 5
Application of the Combined Channeling Method at Higher Ion Energies on Cyclotron
1997 · F. Ditrói, J.D. Meyer, et al. · Materials science forum · 3
Boron localisation in silicon, an application of nuclear reaction channelling for materials analysis
1996 · M. Vollmer, J.D. Meyer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 3
Assessment of carbon concentrations in polycrystalline and monocrystalline gallium arsenide using SSMS, FTIR, and CPAA
1999 · B. Wiedemann, H.Ch. Alt, et al. · Materials Science and Engineering B · 2
Investigation of silicon width (p, ṕ) resonance scattering in 〈110〉 channeling direction
1994 · F. Ditrói, J.D. Meyer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2
Determination of the nitrogen content in silicon by charged particle activation analysis and the calibration of IR-analysis
1991 · F. Köhl, K. Bethge, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2
Feasibility study of high energy channeling experiments at the debrecen cyclotron
1998 · F. Ditrói, J. D. Meyer, et al. · Radiation effects and defects in solids · 1
Molecular ion implantation in silicon
1997 · Andreas Markwitz, Horst Baumann, et al. · Microchimica Acta · 1
Carbon in semi-insulating gallium arsenide: a comparative study between FTIR, SSMS and CPAA
2002 · H.Ch. Alt, B. Wiedemann, et al. · International Conference on Semiconducting and Insulating Materials (SIMC)
Works count: 32
Citation count: 275
H-index: 9
I10-index: 8
Year
Topic
Type