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Tingrui Huang

ORCID: 0009-0008-5828-0718
Observed ORCID: 0009-0008-5828-0718
OpenAlex ID: A5075369490
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen
2022 · Guangan Yang, Hao Tian, et al. · IEEE Transactions on Electron Devices · 22
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors
2023 · Zuoxu Yu, Guangan Yang, et al. · IEEE Transactions on Electron Devices · 17
Improved reliability of a-IGZO thin-film transistor under positive gate bias stress by utilizing NH3 plasma treatment
2023 · Wangran Wu, Wenting Xu, et al. · Microelectronics Reliability · 13
A Monolithically Integrated Low-Dropout Regulator Based on a-InGaZnO TFTs With Ultralow Power Consumption
2023 · Zuoxu Yu, Hansong Xu, et al. · IEEE Electron Device Letters · 13
High-Voltage Indium-Tin-Oxide Thin-Film Transistors Possessing Drift Region Capped With Indium-Tin-Oxide Layer
2024 · Wangran Wu, Tingrui Huang, et al. · IEEE Electron Device Letters · 12
High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region
2024 · Guangan Yang, Weijia Song, et al. · IEEE Transactions on Electron Devices · 10
Positive bias stress reliability of InSnO TFTs: Analysis and Improvement strategies
2025 · Tingrui Huang, Jie Cao, et al. · Applied Surface Science · 9
A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors
2022 · Guangan Yang, Hao Tian, et al. · IEEE Electron Device Letters · 8
A Low-Dropout Regulator Integrated With E-mode IGZO and D-mode ITO/IGZO Dual Layer Thin Film Transistors With Superior Uniformity and Stability
2024 · Zuoxu Yu, Fan Yu, et al. · IEEE Electron Device Letters · 6
A Flexible Low Dropout Regulator Based on InSnO Thin-Film Transistors With Superior Bending Robustness and Ultra-Low Quiescent Current
2025 · Tingrui Huang, Zuoxu Yu, et al. · IEEE Electron Device Letters · 3
Experimental Investigation on the Electrical Properties of a-InGaZnO Thin-Film Transistors Under Total Dose Ionizing Radiation
2025 · Guangan Yang, Geng Huang, et al. · IEEE Electron Device Letters · 3
A 1.25-V Power Source Based on Solid-State Battery and Low Dropout Regulator Integrated With E-Mode a-IGZO and D-Mode ITO Thin-Film Transistors
2024 · Wangran Wu, Zuoxu Yu, et al. · IEEE Transactions on Electron Devices · 3
High-Voltage Amorphous IGZO TFTs with a Drift Region Implemented by an Ultrathin ITO Capping Layer
2022 · Zuoxu Yu, Guangan Yang, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 2
Bilateral 60-V Amorphous InGaZnO Thin-Film Transistors With Symmetric Stair Gate Dielectric
2022 · Guangan Yang, Zuoxu Yu, et al. · IEEE Transactions on Electron Devices · 2
Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design
2026 · Tingrui Huang, Guangan Yang, et al. · Nature Communications · 1
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Flexible ITO TFTs with high mobility of 39.1 cm 2 ·V −1 ·s −1 and excellent uniformity fabricated via mass-production compatible process
2026 · Zuoxu Yu, Yuzhen Zhang, et al. · Journal of Semiconductors · 1
Demonstration of InSnO thin-film transistors with superior uniformity and reliability utilizing SiO 2 passivation
2026 · Tingrui Huang, Jie Cao, et al. · Journal of Semiconductors · 1
An Upper-Tier ESD Protection Scheme Using Parallel-Electrode ITO TFTs for Monolithic-3D Heterogeneous Integration Achieving >3000V HBM Tolerance
2026 · Wenting Xu, Jinfan Wang, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
High-Voltage InSnO Ferroelectric Metal Field-Effect Transistor with Tunable On-Resistance and Breakdown Voltage
2026 · Tingrui Huang, Ruiying Liu, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
A comprehensive investigation of the underlying mechanism for total-ionizing-dose effects in a-InGaZnO TFTs with varied channel thicknesses
2026 · Guangan Yang, Chen Wang, et al. · Applied Physics Letters
Flexible 1T-1FeMTFT Active-matrix Micro-LED Display Utilizing ITO FeMTFT with Record Memory Window of 0.63 V/nm and Low Power Consumption
2025 · Tingrui Huang, Guangan Yang, et al. · Technical digest - International Electron Devices Meeting/Technical digest
Surface Potential-Based Compact Model for ITO Thin-Film Transistors with Ultra-Thin Channel
2024 · Wenting Xu, Xinxin Shen, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology
200-V ITO Thin-Film Transistors with the Stair-ITO Drift Region
2022 · Tingrui Huang, Zuoxu Yu, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology
High-Voltage a-IGZO Thin Film Transistor with the Symmetrical Stair Gate-Dielectric Structure
2022 · Guangan Yang, Tingrui Huang, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Works count: 24
Citation count: 126
H-index: 8
I10-index: 6
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