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Author

Yuangang Wang

Observed name: Yuan-Gang Wang
ORCID: 0000-0002-4240-7875
Observed ORCID: 0000-0002-4240-7875
OpenAlex ID: A5075779549
Demonstration of β-Ga 2 O 3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm 2 or a 5A/700 V Handling Capabilities
2020 · Yuanjie Lv, Yuangang Wang, et al. · IEEE Transactions on Power Electronics · 165
Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2
2020 · Yuanjie Lv, Hongyu Liu, et al. · IEEE Electron Device Letters · 150
Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2
2018 · Yuanjie Lv, Xingye Zhou, et al. · IEEE Electron Device Letters · 119
High-Voltage ($\overline{\text{2}}01$ ) $\beta$ -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination
2019 · Yuangang Wang, Shujun Cai, et al. · IEEE Electron Device Letters · 88
Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing
2019 · Yuanjie Lv, Xingye Zhou, et al. · physica status solidi (RRL) - Rapid Research Letters · 84
A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power
2020 · Shixiong Liang, Xubo Song, et al. · IEEE Electron Device Letters · 72
10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation
2023 · Hongyu Liu, Yuangang Wang, et al. · IEEE Electron Device Letters · 63
Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination
2021 · Yuxi Wei, Xiaorong Luo, et al. · IEEE Transactions on Power Electronics · 62
Superior Performance β-Ga 2 O 3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier
2023 · Feihong Wu, Yuangang Wang, et al. · IEEE Transactions on Electron Devices · 61
Oxygen annealing impact on β -Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density
2020 · Yuanjie Lv, Hongyu Liu, et al. · Applied Physics Letters · 42
Large-Area 4H-SiC Ultraviolet Avalanche Photodiodes Based on Variable-Temperature Reflow Technique
2018 · Xingye Zhou, Tingting Han, et al. · IEEE Electron Device Letters · 37
Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs
2018 · Yuanjie Lv, Jianghui Mo, et al. · Superlattices and Microstructures · 36
GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz
2021 · Xubo Song, Shixiong Liang, et al. · IEEE Electron Device Letters · 35
Lateral source field-plated β -Ga 2 O 3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm 2
2019 · Yuanjie Lv, Xingye Zhou, et al. · Semiconductor Science and Technology · 35
AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure
2014 · Yulong Fang, Zhihong Feng, et al. · IEEE Transactions on Electron Devices · 28
8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination
2024 · Feihong Wu, Zhao Han, et al. · Applied Physics Express · 27
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress
2022 · Zhuolin Jiang, Yuxi Wei, et al. · IEEE Transactions on Electron Devices · 27
Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs
2014 · Xingye Zhou, Zhihong Feng, et al. · Solid-State Electronics · 27
Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V
2019 · Yuanjie Lü, Xubo Song, et al. · Journal of Semiconductors · 26
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High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit
2019 · Xin Tan, Yuanjie Lv, et al. · Microelectronic Engineering · 25
Single-event burnout in β -Ga2O3 Schottky barrier diode induced by high-energy proton
2024 · Xing Li, Weibo Jiang, et al. · Applied Physics Letters · 22
$8\times8$ 4H-SiC Ultraviolet Avalanche Photodiode Arrays With High Uniformity
2019 · Xingye Zhou, Zhihong Feng, et al. · IEEE Electron Device Letters · 22
70-nm-gated InAlN/GaN HEMTs grown on SiC substrate withfT/fmax> 160 GHz
2016 · Tingting Han, Shaobo Dun, et al. · Journal of Semiconductors · 21
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Nonuniform Mechanism for Positive and Negative Bias Stress Instability in β-Ga 2 O 3 MOSFET
2022 · Zhuolin Jiang, Jie Wei, et al. · IEEE Transactions on Electron Devices · 20
Dynamic Characteristics of AlGaN/GaN Fin-MISHEMTs With Al2O3Dielectric
2018 · Xingye Zhou, Xin Tan, et al. · IEEE Transactions on Electron Devices · 19
Works count: 83
Citation count: 1,694
H-index: 22
I10-index: 45
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