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Author

Masahiro Yoshimoto

Observed names: M Yoshimoto, M. Yoshimoto, Masahiro YOSHIMOTO, Masahiro Yoshimoto Masahiro Yoshimoto, Mashahiro Yoshimoto, Yoshimoto,Masahiro
Observed institutions: Tokyo Institute of Technology, IBM (United States), Kyoto University, Kyoto Institute of Technology, Instituto Costarricense de Electricidad, Kanagawa Institute of Industrial Science and Technology, Samsung Semiconductor (United States), Fair Isaac Corporation (United States)
ORCID: 0000-0003-4224-6466
Observed ORCID: 0000-0003-4224-6466
OpenAlex ID: A5076238325
Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
2003 · Masahiro Yoshimoto, Satoshi Murata, et al. · Japanese Journal of Applied Physics · 136
Heteroepitaxial growth of ε-Ga 2 O 3 thin films on cubic (111) MgO and (111) yttria-stablized zirconia substrates by mist chemical vapor deposition
2016 · Hiroyuki Nishinaka, Daisuke Tahara, et al. · Japanese Journal of Applied Physics · 117
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Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix
2005 · Wei Huang, Kunishige Oe, et al. · Journal of Applied Physics · 114
Microstructures and rotational domains in orthorhombic ε-Ga 2 O 3 thin films
2018 · Hiroyuki Nishinaka, Hiroki Komai, et al. · Japanese Journal of Applied Physics · 111
Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBixLaser by Photo-Pumping
2010 · Yoriko Tominaga, Kunishige Oe, et al. · Applied Physics Express · 99
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Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen
2003 · Masahiro Yoshimoto, Hiroaki Yamamoto, et al. · Applied Physics Letters · 91
Stoichiometric control for heteroepitaxial growth of smooth ε-Ga 2 O 3 thin films on c -plane AlN templates by mist chemical vapor deposition
2017 · Daisuke Tahara, Hiroyuki Nishinaka, et al. · Japanese Journal of Applied Physics · 89
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Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers
2017 · Hiroyuki Nishinaka, Daisuke Tahara, et al. · Materials Letters · 81
Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering
2018 · H. Nishinaka, N. Miyauchi, et al. · CrystEngComm · 78
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
2006 · S. Kamiyama, T. Maeda, et al. · Journal of Applied Physics · 78
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Rapid homoepitaxial growth of (010) β-Ga2O3 thin films via mist chemical vapor deposition
2021 · Hiroyuki Nishinaka, Tatsuji Nagaoka, et al. · Materials Science in Semiconductor Processing · 76
Heteroepitaxial growth of ε-(AlxGa1−x)2O3 alloy films on c-plane AlN templates by mist chemical vapor deposition
2018 · Daisuke Tahara, Hiroyuki Nishinaka, et al. · Applied Physics Letters · 75
Structural investigation of GaAs1−xBix/GaAs multiquantum wells
2008 · Yoriko Tominaga, Yusuke Kinoshita, et al. · Applied Physics Letters · 65
Temperature dependence of Bi behavior in MBE growth of InGaAs/InP
2007 · Gan Feng, Kunishige Oe, et al. · Journal of Crystal Growth · 63
Heteroepitaxial growth of single-phase ε-Ga 2 O 3 thin films on c -plane sapphire by mist chemical vapor deposition using a NiO buffer layer
2018 · Y. Arata, H. Nishinaka, et al. · CrystEngComm · 60
Demonstration of Bixbyite-Structured δ-Ga 2 O 3 Thin Films Using β-Fe 2 O 3 Buffer Layers by Mist Chemical Vapor Deposition
2023 · Takahiro Kato, Hiroyuki Nishinaka, et al. · ACS Applied Electronic Materials · 58
Preparation of hydrogenated amorphous Si-C alloy films and their properties
1984 · J. Saraie, Y. Fujii, et al. · Thin Solid Films · 51
Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy
2006 · Yuji Takehara, Masahiro Yoshimoto, et al. · Japanese Journal of Applied Physics · 50
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New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
2005 · Gan Feng, Masahiro Yoshimoto, et al. · Japanese Journal of Applied Physics · 50
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Spectroscopic observation of oxidation process in InN
2004 · E. Kurimoto, M. Hangyo, et al. · Applied Physics Letters · 50
Long-wavelength emission in photo-pumped GaAs1−xBixlaser with low temperature dependence of lasing wavelength
2013 · Takuma Fuyuki, Ryo Yoshioka, et al. · Applied Physics Letters · 49
Single-Domain and Atomically Flat Surface of κ-Ga2O3 Thin Films on FZ-Grown ε-GaFeO3 Substrates via Step-Flow Growth Mode
2020 · Hiroyuki Nishinaka, Osamu Ueda, et al. · ACS Omega · 48
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Electrically pumped room-temperature operation of GaAs1−xBixlaser diodes with low-temperature dependence of oscillation wavelength
2014 · Takuma Fuyuki, Kenji Yoshida, et al. · Applied Physics Express · 48
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Growth and characterization of F-doped α-Ga2O3 thin films with low electrical resistivity
2019 · Shota Morimoto, Hiroyuki Nishinaka, et al. · Thin Solid Films · 44
New semiconductor alloy GaNAsBi with temperature‐insensitive bandgap
2006 · Masahiro Yoshimoto, Wei Huang, et al. · physica status solidi (b) · 41
Works count: 284
Citation count: 3,333
H-index: 32
I10-index: 82
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