Author

Ireneusz Strzałkowski

Observed names: I Strzalkowski, I Strzałkowski, I. Strzalkowski, I. Strzałkowski, Ireneusz Strzalkowski, Strzałkowski, Ireneusz (1939-2006)

Institution: Warsaw University of Technology

Observed institutions: Warsaw University of Technology, University of Southern California, Institute of Physics

OpenAlex ID: A5076248178

Condensed Matter Physics

2000 · I Strzalkowski · European Journal of Physics · 298

Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe

1976 · Ireneusz Strzalkowski, Sharad Joshi, et al. · Applied Physics Letters · 197

π-bonded model of an oxygen-vacancy center in SiO2

1987 · J. M. Baranowski, I. Strzalkowski, et al. · Journal of Applied Physics · 8

Reversible and irreversible interface trap centres generated at high electric fields in MOS structures

2000 · C Jastrzębski, I Strzałkowski · Microelectronics Reliability · 6

Electric field dependence of the capture cross section of ion-implantation-induced traps in SiO2 layers

1983 · I. Strzałkowski, M. Marczewski, et al. · Thin Solid Films · 6

Positive and negative charge creation in the SiO2 film of a MOS transistor by high electric field stress

1996 · I. Strzalkowski, M. Kowalski · Applied Physics A · 5

Determination of hydrogen in GaMnN and GaMnMgN by nuclear reaction analysis

2003 · Sławomir Podsiadło, Tomasz Szyszko, et al. · Vacuum · 4

Thermal depopulation studies of electron traps in ion implanted silica layers

1986 · I. Strzałkowski, M. Marczewski, et al. · Applied Physics A · 4

Photoinjection studies of ion-implantation-induced electron traps in MOS structures

1982 · M. Marczewski, I. Strzałkowski · Applied Physics A · 4

Hydrogen behaviour in novel materials for spintronic: GaFeN codoped with Mg, Si and Al

2005 · Andrzej Turos, A.M. Abdul-Kader, et al. · Vacuum · 3

The Physics of Semiconductors with Applications to Optoelectronics Devices

1999 · I Strzalkowski · European Journal of Physics · 1

Electric Field Stimulated Emission of Electrons from Deep Traps in SiO2

1993 · I. Strzałkowski, M. Marczewski, et al. · Acta Physica Polonica A · 1

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Low field DC investigation of hot carrier trapping in silicon dioxide films

1990 · I. Strzałkowski, M. Marczewski, et al. · Applied Physics A · 1

Electron and Hole Traps Related to A π-Bonded Oxygen Vacancy Center in SiO2

1988 · Ireneusz Strzalkowski · Springer eBooks · 1

Boron Impurity Centers in SiO2 a Tight Binding Consideration

1988 · Mariusz Marczewski, Ireneusz Strzalkowski, et al. · Springer eBooks · 1

Soft Interfaces

1997 · Ireneusz Strzalkowski · European Journal of Physics

SiO2Layer Charge State Variation in Fowler-Nordheim Tunneling Regime

1997 · I. Strzałkowski, M. Kowalski · Acta Physica Polonica A

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Positive and negative charge creation in the SiO 2 film of a MOS transistor by high electric field stress

1996 · I. Strzałkowski, M. Kowalski · Applied Physics A

On Trap Generation in SiO2Films of Si MOSFETS by Hot Electrons

1992 · I. Strzałkowski, M. Marczewski, et al. · Acta Physica Polonica A

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Badanie wpływu czasu przyłożenia silnego pola elektrycznego na nasycenie dielektryczne w alkoholach : praca doktorska

1969 · Strzałkowski, Ireneusz (1939-2006) · Our Digital Library (Warsaw University of Technology)

Works count: 20

Citation count: 540

H-index: 5

I10-index: 2