Author

V. A. Moskovkin

Institution: National Research Tomsk State University

Observed institutions: National Research Tomsk State University, A.V. Shubnikov Institute of Crystallography, Academy of Sciences of the Soviet Union

OpenAlex ID: A5076295659

Effect of substrate orientation on growth rate and doping level of vapour grown GaAs. Interval (111)A—(100)—(111)B

1971 · L. G. Lavrentyeva, Yu. G. Kataev, et al. · Kristall und Technik · 23

Kinetics of capture of tellurium by {111} gallium arsenide faces in the GaAs-AsCl3-H2 system at various supersaturations

1983 · L. G. Lavrent'eva, M. D. Vilisova, et al. · Russian Physics Journal · 1

Effects of growth temperature and substrate orientation on the entry of tellurium into epitaxial gallium arsenide films

1982 · L. G. Lavrent'eva, M. D. Vilisova, et al. · Russian Physics Journal · 1

Influence of crystallization temperature on the structure of growth surfaces of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2

1982 · L. G. Lavrent'eva, V. G. Ivanov, et al. · Russian Physics Journal · 1

Influence of crystallization temperature on growth rate of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2

1982 · L. G. Lavrent'eva, V. G. Ivanov, et al. · Russian Physics Journal · 1

Morphology of Autoepitaxial Gallium Arsenide in the Crystallographic Range (111)A-( 100)-( 111 )B

1975 · L. G. Lavrent’eva, M. P. Yakubenya, et al. · Springer eBooks · 1

Influence of thermal processing on the properties of Sn-doped GaAs epitaxial layers

1989 · I. A. Bobrovnikova, M. D. Vilisova, et al. · Russian Physics Journal

Iron impurity state in vapor and solid phases during the epitaxy of gallium arsenide in the Ga-AsCl/sub 3/-H/sub 2/ system

1986 · Vilisova, G. M. Ikonnikova, et al. · Inorg. Mater. (Engl. Transl.); (United States)

Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

1981 · L. G. Lavrent'eva, V. A. Moskovkin, et al. · Russian Physics Journal

Micromorphology of autoepitaxial gallium arsenide: Effects of substrate orientation

1973 · L. G. Lavrent'eva, I. V. Ivonin, et al. · Russian Physics Journal

Study of the diffusion of gallium and arsenic into germanium during the epitaxial growth of gallium arsenide on the latter

1973 · L. E. �piktetova, L. P. Vasil'eva, et al. · Russian Physics Journal

Effect of Substrate Orientation on Growth Rate and Doping Level of Vapour Grown GaAs. Interval (111)A—(100)—(111)B

1971 · L. G. Lavrentyeva, Yu. G Kataev, et al. · De Gruyter eBooks

Basic laws and causes governing the formation of transitional layers in the autoepitaxy of gallium arsenide

1971 · L. G. Lavrent'eva, Yu. G. Kataev, et al. · Russian Physics Journal

Epitaxial gallium arsenide

1970 · L. G. Lavrent'eva, M. P. Yakubenya, et al. · Russian Physics Journal

Anisotropy in the electrical properties of epitaxial n-type gallium arsenide

1969 · L. G. Lavrent'eva, Yu. G. Kataev, et al. · Russian Physics Journal

Works count: 15

Citation count: 28

H-index: 1

I10-index: 1