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Son Le
Observed names:
Le, Son,
S. Le
Institutions:
Western Digital (United States),
Asian Development Bank
Observed institutions:
IBM (United States),
TDK (Japan),
IBM Research - Almaden,
Western Digital (United States),
Asian Development Bank
ORCID:
0000-0002-3969-0585
Observed ORCID:
0000-0002-3969-0585
OpenAlex ID:
A5076320971
Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)
2014
·
Luc Thomas
, Guenole Jan
, et al.
·
Journal of Applied Physics
·
260
Spin-valve RAM cell
1995
·
D.D. Tang
, P.K. Wang
, et al.
·
IEEE Transactions on Magnetics
·
154
Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method
2015
·
Luc Thomas
, Guenole Jan
, et al.
·
Applied Physics Letters
·
69
Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories
2014
·
Guenole Jan
, Luc Thomas
, et al.
·
Symposium on VLSI Technology
·
66
Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications
2015
·
Yu Lu
, Tom Zhong
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
61
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
2008
·
R. Beach
, T. Min
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
56
Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory
2019
·
Jodi M. Iwata-Harms
, Guenole Jan
, et al.
·
Scientific Reports
·
49
PDF
Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM
2015
·
Luc Thomas
, Guenole Jan
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
38
Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms
2016
·
Guenole Jan
, Luc Thomas
, et al.
·
Symposium on VLSI Technology
·
36
Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications
2018
·
Guenole Jan
, Luc Thomas
, et al.
·
Symposium on VLSI Technology
·
34
STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes
2018
·
Luc Thomas
, Guenole Jan
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
20
High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers
2024
·
Zhang Ruixian
, Ho Hoang Huy
, et al.
·
Applied Physics Letters
·
17
Probing magnetic properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR
2017
·
Luc Thomas
, Guenole Jan
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
17
Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology
2023
·
Ho Hoang Huy
, Julian Sasaki
, et al.
·
Applied Physics Letters
·
16
An IC process compatible nonvolatile magnetic RAM
2002
·
D.D. Tang
, P.K. Wang
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
16
Improvement of the Effective Spin Hall Angle by Inserting an Interfacial Layer in Sputtered BiSb Topological Insulator (Bottom)/Ferromagnet With In-Plane Magnetization
2021
·
J. Sasaki
, H. H. Huy
, et al.
·
IEEE Transactions on Magnetics
·
15
Demonstration of an MgO based anti-fuse OTP design integrated with a fully functional STT-MRAM at the Mbit level
2015
·
Guenole Jan
, Luc Thomas
, et al.
·
Symposium on VLSI Technology
·
12
Demonstration of chip level writability, endurance and data retention of an entire 8Mb STT-MRAM array
2013
·
Y. J. Lee
, G. Jan
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
8
MRAM array with coupled soft-adjacent magnetic layer
2005
·
Yimin Guo
, P. Wang
, et al.
·
Journal of Applied Physics
·
8
Large Spin Hall Angle in Sputtered BiSb Topological Insulator on Top of Various Ferromagnets With In-Plane Magnetization for SOT Reader Application
2022
·
H. H. Huy
, J. Sasaki
, et al.
·
IEEE Transactions on Magnetics
·
6
STT-MRAM for embedded memory applications from eNVM to last level cache
2017
·
Luc Thomas
, Guenole Jan
, et al.
·
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
·
6
Spin Transfer Torque driven dynamics of the synthetic antiferromagnetic reference layer of perpendicular MRAM devices
2017
·
L. Thomas
, M. Benzaouia
, et al.
·
IEEE International Magnetics Conference
·
6
Thermal reliability and spin Hall angle of highly textured and epitaxial Bi0.9Sb0.1(012) topological insulator
2025
·
Quang Le
, Brian R. York
, et al.
·
Japanese Journal of Applied Physics
·
5
RuRhMn and PtMn specular spin-valve with magnetic oxide layer
2000
·
Y. Tsuchiya
, S. Le
, et al.
·
IEEE Transactions on Magnetics
·
5
Spin Hall magnetic field sensing device using topological insulator
2024
·
Min Liu
, Zhang Ruixian
, et al.
·
Applied Physics Letters
·
4
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Works count:
44
Citation count:
1,004
H-index:
15
I10-index:
17
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