Get started
Author

Krista R. Khiangte

Observed names: K R Khiangte, K. R. Khiangte, Khiangte, K.R., Khiangte, Krista, Khiangte, Krista R, Khiangte, Krista R., Krista R. Khiangte, Krista Khiangte, Krista R Khiangte, Krista Roluahpuia Khiangte
ORCID: 0000-0003-0294-7815
Observed ORCID: 0000-0003-0294-7815
OpenAlex ID: A5076341079
Laser induced phase transformation influenced by Co doping in TiO2 nanoparticles
2018 · Lalit Kumar Gaur, Promod Kumar, et al. · Journal of Alloys and Compounds · 52
Dislocation density and strain-relaxation in Ge 1−x Sn x layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy
2017 · Krista R. Khiangte, Jaswant S. Rathore, et al. · Journal of Crystal Growth · 19
Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates
2018 · Krista R. Khiangte, Jaswant S. Rathore, et al. · Solid State Communications · 16
PDF
Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures
2018 · Krista R. Khiangte, Jaswant S. Rathore, et al. · Journal of Applied Physics · 16
PDF
Single crystalline Ge thin film growth on c -plane sapphire substrates by molecular beam epitaxy (MBE)
2022 · Emmanuel Wangila, Samir K. Saha, et al. · CrystEngComm · 14
Self-Assembled Sn Nanocrystals as the Floating Gate of Nonvolatile Flash Memory
2019 · Jaswant S. Rathore, Rajveer Fandan, et al. · ACS Applied Electronic Materials · 14
Decomposition Resilience of GaN Nanowires, Crested and Surficially Passivated by AlN
2020 · Swagata Bhunia, Ritam Sarkar, et al. · Crystal Growth & Design · 13
Wafer-scale mono-crystalline GeSn alloy on Ge by sputtering and solid phase epitaxy
2020 · Sachin Dev, Krista R Khiangte, et al. · Journal of Physics D Applied Physics · 11
Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy
2018 · Krista R Khiangte, Jaswant S Rathore, et al. · Journal of Physics D Applied Physics · 11
PDF
Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy
2023 · Dhammapriy Gayakwad, Dushyant Singh, et al. · Journal of Crystal Growth · 10
Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence
2023 · Rahul Kumar, Samir K. Saha, et al. · Crystal Growth & Design · 6
Triaxially uniform high-quality Al x Ga (1− x ) N ( x ∼ 50%) nanowires on template free sapphire substrate
2018 · Ritam Sarkar, Kankat Ghosh, et al. · Nanotechnology · 6
PDF
On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
2016 · Sudipta Das, Krista R. Khiangte, et al. · Current Applied Physics · 6
Epitaxial Gd 2 O 3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application
2017 · Kankat Ghosh, S Das, et al. · Journal of Physics D Applied Physics · 5
PDF
Viable scaling mechanism ensuing anomalous Hall effect in Si/Ni multilayers from 2 K-300 K
2025 · Dushyant Singh, Shivesh Yadav, et al. · Journal of Magnetism and Magnetic Materials · 4
Evolution of structurally induced magnetic and optical properties of Co-doped ZnS nanoparticles
2026 · Vigneshwari SR, Dushyant Singh, et al. · Journal of Magnetism and Magnetic Materials · 3
Tailoring nanocrystallite ZnS through Fe doping
2025 · Vigneshwari S R, Dushyant Singh, et al. · Physica B Condensed Matter · 3
Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy
2024 · Dushyant Singh, Tharundev V V, et al. · Journal of Crystal Growth · 3
Octahedral tilt–driven anisotropy and wasp-waisted hysteresis in canted antiferromagnetic LaFe(1-x)NixO3
2026 · Subha Maity, Dushyant Singh, et al. · Journal of Alloys and Compounds · 2
Self-assembled straw-bundle-like CsPbI3 microstructure by TPPi assisted growth
2026 · Subha Maity, Solma Hansda, et al. · Current Applied Physics · 2
Temperature-Dependent Raman Spectroscopy Analysis of Epitaxially Grown Ge0.91Sn0.09 on GaAs (001) Substrate
2025 · Dushyant Singh, Chandan Bhai Patel, et al. · Physics of the Solid State · 2
Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique
2016 · Sarkar, Ritam, Fandan, R., et al. · arXiv (Cornell University) · 2
PDF
Investigation on the structural and anomalous magnetic behavior of high Ni-doped lanthanum orthoferrite
2026 · Subha Maity, Dushyant Singh, et al. · Journal of Magnetism and Magnetic Materials · 1
Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy
2019 · Ravindra S. Pokharia, Krista Khiangte, et al. · Optical Components and Materials · 1
Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS
2018 · Shraddha Kothari, Jaswant S. Rathore, et al. · IEEE International Conference on Emerging Electronics (ICEE) · 1
Works count: 43
Citation count: 224
H-index: 10
I10-index: 10
Year
Topic
Type