Get started
Author

Engin Tiras

Observed names: E Tiras, E Tıraş, E. Tiras, E. Tiraş, Engin Tıraş, TIRAŞ, ENGİN
ORCID: 0000-0003-1711-3637
Observed ORCID: 0000-0003-1711-3637
OpenAlex ID: A5076533541
Effective mass of electron in monolayer graphene: Electron-phonon interaction
2013 · E. Tiras, S. Ardali, et al. · Journal of Applied Physics · 77
PDF
Well-width dependence of the in-plane effective mass and quantum lifetime of electrons in multiple quantum wells
1997 · H Çelik, M Cankurtaran, et al. · Semiconductor Science and Technology · 45
Hot electron energy relaxation via acoustic phonon emission in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions with double-subband occupancy
2001 · E. Tiras, M. Cankurtaran, et al. · Physical review. B, Condensed matter · 22
Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate
2021 · F. Sonmez, E. Arslan, et al. · Journal of Alloys and Compounds · 20
PDF
Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN
2011 · Ozlem Celik, Engin Tiras, et al. · Open Physics · 20
PDF
Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility
2019 · O Donmez, M Aydın, et al. · Semiconductor Science and Technology · 17
The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
2015 · S. Ardali, G. Atmaca, et al. · physica status solidi (b) · 16
Magnetotransport in modulation-doped In Ga As/In Al As heterojunctions: in-plane effective mass, quantum and transport mobilities of 2D electrons
2001 · E. Tiras, M. Cankurtaran, et al. · Superlattices and Microstructures · 16
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
2012 · Engin Tiras, Ozlem Celik, et al. · Superlattices and Microstructures · 15
Quantum and Transport Mobilities of Electrons in GaAs/Ga1?xAlxAs Multiple Quantum Wells
1998 · M. Cankurtaran, H. �elik, et al. · physica status solidi (b) · 14
Well-width dependence of interface roughness scattering in GaAs/Ga1−xAlxAs quantum wells
1997 · N. Balkan, R. Gupta, et al. · Superlattices and Microstructures · 14
Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
2010 · E. Tiras, N. Balkan, et al. · The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics · 13
PDF
Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures
2012 · H.M. Khalil, S. Mazzucato, et al. · Materials Science and Engineering B · 12
Determination of the in‐plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
2011 · Ozlem Celik, Engin Tiras, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 12
PDF
In rich In1−x Ga x N: Composition dependence of longitudinal optical phonon energy
2009 · E. Tiras, M. Gunes, et al. · physica status solidi (b) · 12
Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures
2020 · O Donmez, M Aydın, et al. · Semiconductor Science and Technology · 11
Contactless electron effective mass determination in GaInNAs/GaAs quantum wells
2012 · E. Tiras, S. Ardali · The European Physical Journal B · 10
Superconductivity in heavily compensated Mg-doped InN
2009 · E. Tiras, M. Gunes, et al. · Applied Physics Letters · 10
PDF
Temperature controlled phase transition and characterization of Cu2O and CuO thin films grown at different growth temperatures via mist CVD
2026 · Polat Narin, Ece Kutlu-Narin, et al. · Applied Physics A · 9
PDF
The effect of barrier layers on 2D electron effective mass in Al 0.3 Ga 0.7 N/AlN/GaN heterostructures
2021 · F Sonmez, S Ardali, et al. · Journal of Physics Condensed Matter · 9
PDF
Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD
2016 · Engin Arslan, Mustafa K. Öztürk, et al. · Journal of Materials Science Materials in Electronics · 9
Electron and hole energy relaxation rates in GaInNAs/GaAs quantum wells via deformation potential and piezoelectric scattering
2012 · Engin Tiras, Sukru Ardali · physica status solidi (b) · 8
Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra
2012 · E. Tiras, M. Tanisli, et al. · physica status solidi (b) · 8
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si 3 N 4 passivation layer
2016 · G. Atmaca, S. Ardali, et al. · Solid-State Electronics · 7
Determination of the alloy scattering potential in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions from magnetotransport measurements
2005 · E. Tiraş, S. Altinöz, et al. · Journal of Materials Science · 7
Works count: 57
Citation count: 507
H-index: 12
I10-index: 18
Year
Topic
Type