Author

Yeongjin Hwang

Institution: Inha University

Observed institutions: Inha University, Yeungnam University

ORCID: 0000-0002-6872-1096

Observed ORCID: 0000-0002-6872-1096

OpenAlex ID: A5076624850

4‐bit Multilevel Operation in Overshoot Suppressed Al 2 O 3 /TiO x Resistive Random‐Access Memory Crossbar Array

2022 · Sungjoon Kim, Jinwoo Park, et al. · Advanced Intelligent Systems · 63

Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system

2021 · Tae-Hyeon Kim, Sungjoon Kim, et al. · Chaos Solitons & Fractals · 61

Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System

2020 · Jun Tae Jang, Jungi Min, et al. · IEEE Access · 44

Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices

2021 · Manh-Cuong Nguyen, Kitae Lee, et al. · IEEE Electron Device Letters · 25

Effect of the Gate Dielectric Layer of Flexible InGaZnO Synaptic Thin-Film Transistors on Learning Behavior

2021 · Shinyoung Park, Jun Tae Jang, et al. · ACS Applied Electronic Materials · 25

Threshold learning algorithm for memristive neural network with binary switching behavior

2024 · Sangwook Youn, Yeongjin Hwang, et al. · Neural Networks · 18

Effect of Threshold Voltage Window and Variation of Organic Synaptic Transistor for Neuromorphic System

2021 · Yeongjin Hwang, Jeong Hoon Jeon, et al. · Journal of Nanoscience and Nanotechnology · 3

Works count: 7

Citation count: 239

H-index: 6

I10-index: 6