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Kosuke Yanagidaira

Observed names: K. Yanagidaira, Kosuke YANAGIDAIRA, Yanagidaira Kosuke
ORCID: 0009-0003-9676-9702
Observed ORCID: 0009-0003-9676-9702
OpenAlex ID: A5076635047
A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology
2019 · Noboru Shibata, Kazushige Kanda, et al. · IEEE Journal of Solid-State Circuits · 61
13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology
2019 · N. Shibata, K. Kanda, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 51
A 113mm2 32Gb 3b/cell NAND flash memory
2009 · T. Futatsuyama, N. Fujita, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 37
30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology
2021 · Tsutomu Higuchi, Takuyo Kodama, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 35
A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface
2022 · Jong Yuh, Jason Li, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 31
Scaling of Nanocrystal Memory Cell by Direct Tungsten Bitline on Self-Aligned Landing Plug Polysilicon Contact
2004 · I.-G. Kim, K. Yanagidaira, et al. · IEEE Electron Device Letters · 12
A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput
2023 · M. Sako, T. Nakajima, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 11
A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface
2022 · Jong Hak Yuh, Yen-Lung Jason Li, et al. · IEEE Journal of Solid-State Circuits · 11
A 151-mm$^{2}$ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
2011 · Koichi Fukuda, Yoshihisa Watanabe, et al. · IEEE Journal of Solid-State Circuits · 9
7-Bit/2Cell (X3.5), 9-Bit/2Cell (X4.5) NAND Flash Memory: Half Bit technology
2023 · Noboru Shibata, Hironori Uchikawa, et al. · IEEE International Memory Workshop (IMW) · 8
A 1Tb 3b/cell 3D-Flash Memory with a 29%-Improved-Energy-Efficiency Read Operation and 4.8Gb/s Power-Isolated Low-Tapped-Termination I/Os
2025 · Kosuke Yanagidaira, Mario Sako, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 7
A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology
2011 · Koichi Fukuda, Yoshihisa Watanabe, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 6
Enhancement of charge storage performance in double-gate silicon nanocrystal memories with ultrathin body structure
2005 · K. Yanagidaira, M. Saitoh, et al. · IEEE Electron Device Letters · 5
Effects of Channel Thinning on Threshold Voltage Shift in Ultrathin-Body Silicon Nanocrystal Memories
2005 · Kosuke Yanagidaira, Masumi Saitoh, et al. · Japanese Journal of Applied Physics · 4
A 29-Gb/mm 2 1-Tb 3-b/Cell 3-D Flash Memory With CMOS Direct Bonded Array (CBA) Technology
2025 · Kosuke Yanagidaira, Mario Sako, et al. · IEEE Journal of Solid-State Circuits · 2
Gap Channel Routing with Fixed Wires
2025 · Masayuki Shimoda, Atsushi Takahashi, et al. · IEEE International Symposium on Circuits and Systems proceedings · 1
UEO Channel Routing Algorithm to Alleviate Local Congestion for Generalized Channels
2025 · Zezhong WANG, Hiroto NAKAYAMA, et al. · IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences
PDF
24nm CMOS技術による151mm 2 64GB MLC NANDフラッシュメモリ
2011 · Koichi Fukuda, Yoshihisa Watanabe, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
A 113mm2 32Gb 3bit/Cell NAND Flash Memory and Recent Technology Trend of NAND Flash Memory : The Format of Technical Report (Subtitle)
2009 · T. Futatsuyama, Norihiro Fujita, et al. · 電子情報通信学会技術研究報告. ICD, 集積回路
Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories
2004 · Kosuke Yanagidaira, Masumi Saitoh, et al. · International Conference on Solid State Devices and Materials (SSDM)
Integration of fluorinated nano-crystal memory cells with 4.6F/sup 2/ size by landing plug polysilicon contact and direct-tungsten bitline
2004 · Il-Gweon Kim, K. Yanagidaira, et al. · Technical digest - International Electron Devices Meeting/Technical digest
Integration and Performance Improvements of Silicon Nanocrystal Memories
2004 · T. Hiramoto, I. Kim, et al. · MRS Proceedings
Works count: 23
Citation count: 291
H-index: 9
I10-index: 8
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