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J. S. Barnard

Observed names: Barnard, J. S., J Barnard, J S Barnard, J. Barnard, J.S Barnard, J.S. Barnard, Jon Barnard, Jon S. Barnard, Jonathan Barnard, Jonathan S Barnard, Jonathan S. Barnard, Jonathan Simon Barnard
Observed institutions: Uppsala University, Rutherford Appleton Laboratory, Cornell University, University of Cambridge, University of Bristol, University of Oxford, Rosalind Franklin Institute
ORCID: 0000-0003-3841-4498
Observed ORCID: 0000-0003-3841-4498
OpenAlex ID: A5076746792
Microstructure of selective laser melted CM247LC nickel-based superalloy and its evolution through heat treatment
2016 · V.D. Divya, R. Muñoz-Moreno, et al. · Materials Characterization · 289
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
2003 · T. M. Smeeton, M. J. Kappers, et al. · Applied Physics Letters · 275
Formation of M23C6-type precipitates and chromium-depleted zones in austenite stainless steel
2011 · Kenji Kaneko, Tatsuya Fukunaga, et al. · Scripta Materialia · 274
Merging Single-Atom-Dispersed Silver and Carbon Nitride to a Joint Electronic System via Copolymerization with Silver Tricyanomethanide
2016 · Zupeng Chen, Sergey Pronkin, et al. · ACS Nano · 258
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Grain-boundary precipitation in Allvac 718Plus
2012 · E.J. Pickering, H. Mathur, et al. · Acta Materialia · 230
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
2005 · D. M. Graham, A. Soltani-Vala, et al. · Journal of Applied Physics · 218
Threading plasmonic nanoparticle strings with light
2014 · Lars O. Herrmann, Ventsislav K. Valev, et al. · Nature Communications · 171
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High-Resolution Three-Dimensional Imaging of Dislocations
2006 · J. S. Barnard, J. Sharp, et al. · Science · 153
Deformation of silicon – Insights from microcompression testing at 25–500°C
2011 · S. Korte, J.S. Barnard, et al. · International Journal of Plasticity · 142
On the origin of threading dislocations in GaN films
2009 · M. A. Moram, C. S. Ghedia, et al. · Journal of Applied Physics · 138
Segregation assisted microtwinning during creep of a polycrystalline L12-hardened Co-base superalloy
2016 · Lisa P. Freund, Olivier M.D.M. Messé, et al. · Acta Materialia · 127
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
2003 · M. E. Vickers, M. J. Kappers, et al. · Journal of Applied Physics · 124
Coarsening behaviour and interfacial structure of γ′ precipitates in Co-Al-W based superalloys
2016 · V.A. Vorontsov, J.S. Barnard, et al. · Acta Materialia · 111
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Growth and characterisation of GaN with reduced dislocation density
2004 · R. Datta, M.J. Kappers, et al. · Superlattices and Microstructures · 88
On the precipitation of delta phase in ALLVAC®718Plus
2014 · O.M. Messé, J.S. Barnard, et al. · The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics · 86
Organization of Nanoparticles in Polymer Brushes
2009 · Ron Oren, Ziqi Liang, et al. · Journal of the American Chemical Society · 82
Functional conductive nanomaterials via polymerisation in nano-channels: PEDOT in a MOF
2016 · Tiesheng Wang, Meisam Farajollahi, et al. · Materials Horizons · 81
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High-angle triple-axis specimen holder for three-dimensional diffraction contrast imaging in transmission electron microscopy
2011 · S. Hata, H. Miyazaki, et al. · Ultramicroscopy · 74
Growth and characterisation of semi-polar InGaN/GaN MQW structures
2006 · M.J. Kappers, J.L. Hollander, et al. · Journal of Crystal Growth · 69
The Chemical Application of High‐Resolution Electron Tomography: Bright Field or Dark Field?
2004 · John Meurig Thomas, Paul A. Midgley, et al. · Angewandte Chemie International Edition · 69
Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice
2010 · S.E. Bennett, R.M. Ulfig, et al. · Ultramicroscopy · 58
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures
2003 · C. T. Foxon, S. V. Novikov, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 58
Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells
2011 · Samantha E Bennett, David W Saxey, et al. · Applied Physics Letters · 56
Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography
1999 · D. Cherns, J. Barnard, et al. · Solid State Communications · 51
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy
2006 · T. M. Smeeton, C. J. Humphreys, et al. · Journal of Materials Science · 50
Works count: 106
Citation count: 4,263
H-index: 34
I10-index: 59
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