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M. Baldo

Observed names: BALDO, Matteo, Baldo, Matteo, Matteo Baldo
ORCID: 0000-0002-7639-5542
Observed ORCID: 0000-0002-7639-5542
OpenAlex ID: A5076986301
Modeling and Compensation of IR Drop in Crosspoint Accelerators of Neural Networks
2022 · N. Lepri, M. Baldo, et al. · IEEE Transactions on Electron Devices · 58
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Modeling of virgin state and forming operation in embedded phase change memory (PCM)
2020 · M. Baldo, O. Melnic, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21
Heterogeneous Embedded Neural Processing Units Utilizing PCM-Based Analog In-Memory Computing
2024 · I. Boybat, T. Boesch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19
Phase Change Memory: A Review on Electrical Behavior and Use in Analog In‐Memory‐Computing (A‐IMC) Applications
2024 · Mattia Boniardi, Matteo Baldo, et al. · Advanced Electronic Materials · 19
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BEOL Process Effects on ePCM Reliability
2022 · A. Redaelli, A. Gandolfo, et al. · IEEE Journal of the Electron Devices Society · 15
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Phase transitions and chemical segregation in Ge-rich GST based phase change memory cells
2025 · Sijia Ran, Elisa Petroni, et al. · Scientific Reports · 14
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Modeling Environment for Ge-rich GST Phase Change Memory Cells
2022 · M. Baldo, L. Laurin, et al. · IEEE International Memory Workshop (IMW) · 12
Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology
2023 · L. Laurin, M. Baldo, et al. · IEEE International Reliability Physics Symposium proceedings · 11
Modeling of oxide-based ECRAM programming by drift-diffusion ion transport
2021 · Matteo Baldo, Daniele Ielmini · IEEE International Memory Workshop (IMW) · 11
Improving Ge-rich GST ePCM reliability through BEOL engineering
2021 · A. Redaelli, A. Gandolfo, et al. · European Solid-State Device Research Conference · 10
Advanced Metrics for Quantification of By‐Process Segregation beyond Ternary Systems
2023 · Elisa Petroni, Matteo Patelmo, et al. · physica status solidi (RRL) - Rapid Research Letters · 6
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories
2023 · M. Baldo, O. Melnic, et al. · IEEE Transactions on Electron Devices · 6
Temperature and Drift-Aware High-Level PCM-based Array Model for Reliable Hardware IMC Design
2025 · V. Viollet, E. Esmanhotto, et al. · IEEE International Reliability Physics Symposium proceedings · 4
Characterization of reset state through energy activation study in Ge-GST based ePCM
2022 · Matteo Baldo, Lorenzo Turconi, et al. · European Solid-State Device Research Conference · 4
Study of Ge‐Rich Ge–Sb–Te Device‐Dependent Segregation for Industrial Grade Embedded Phase‐Change Memory
2024 · Elisa Petroni, Mario Allegra, et al. · physica status solidi (RRL) - Rapid Research Letters · 3
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Interaction between forming pulse and integration process flow in ePCM
2022 · Matteo Baldo, Elisa Petroni, et al. · Conference on Ph.D. Research in Microelectronics and Electronics · 3
Enhancing reliability of a strong physical unclonable function (PUF) solution based on virgin-state phase change memory (PCM)
2023 · L. Cattaneo, M. Baldo, et al. · IEEE International Reliability Physics Symposium proceedings · 2
Linear compensation of drift and mitigation of drift variations in PCM arrays for highly accurate, energy efficient in-memory computing
2025 · D. Bondì, S. Giangrasso, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 1
A Novel A-IMC Ge-GST ePCM Cell for Edge AI Applications on 28nm FD-SOI Platform
2025 · M. Baldo, M. Allegra, et al. · Technical digest - International Electron Devices Meeting/Technical digest
Simulation of Ge-rich PCM Device Material Evolution from Post-Deposition Anneal to Programming Operations
2025 · E. Piccinini, N. Giuliani, et al. · IEEE International Memory Workshop (IMW)
A Novel A-IMC Ge-GST ePCM Cell for Edge AI Applications on 28nm FD-SOI Platform
2023 · Baldo, Matteo · Zenodo (CERN European Organization for Nuclear Research)
TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM
2023 · M. Baldo, L. Laurin, et al. · International Conference on Simulation of Semiconductor Processes and Devices
Works count: 24
Citation count: 219
H-index: 10
I10-index: 10
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