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Author

Eiji Kagoshima

Observed name: E. Kagoshima
ORCID: 0009-0006-5123-7114
Observed ORCID: 0009-0006-5123-7114
OpenAlex ID: A5077130144
The FinFET effect in Silicon Carbide MOSFETs
2021 · F. Udrea, K. Naydenov, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 24
Experimental demonstration, challenges, and prospects of the vertical SiC FinFET
2022 · F. Udrea, K. Naydenov, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 20
Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor
2020 · Wakana Takeuchi, Katsuhiro Kutsuki, et al. · Japanese Journal of Applied Physics · 10
Experimental Investigation and Improvement of Channel Mobility in 4H-SiC Trench MOSFETs
2019 · K. Kutsuki, E. Kagoshima, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs
2019 · Katsuhiro Kutsuki, Eiji Kagoshima, et al. · Japanese Journal of Applied Physics · 7
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Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO 2 /SiC gate interface
2022 · E. Kagoshima, W. Takeuchi, et al. · Japanese Journal of Applied Physics · 6
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Improvement of Heavy Ion-Induced Single-Event Burnout Tolerance Based on Automotive SiC Trench MOSFETs
2026 · E. Kagoshima, M. Takahashi, et al. · IEEE Transactions on Nuclear Science · 1
Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction
2022 · Wakana Takeuchi, Eiji Kagoshima, et al. · Japanese Journal of Applied Physics · 1
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Carrier Scattering Mechanism in SiC Trench MOSFETs
2019 · K. Kutsuki, E. Kagoshima, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Impacts of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC Trench MOSFET
2024 · Momoko Inayoshi, Naotoshi Hikosaka, et al. · International Conference on Solid State Devices and Materials (SSDM)
Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors
2024 · Misa Takahashi, Eiji Kagoshima, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
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Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface
2021 · Eiji Kagoshima, Wakana Takeuchi, et al. · International Conference on Solid State Devices and Materials (SSDM)
Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction
2021 · Wakana Takeuchi, Eiji Kagoshima, et al. · International Conference on Solid State Devices and Materials (SSDM)
Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET
2019 · W. Takeuchi, K. Kutsuki, et al. · International Conference on Solid State Devices and Materials (SSDM)
Effect of Mechanical Uniaxial Stress on Mobility in 4H-SiC(0001) MOSFET
2019 · Wakana Takeuchi, Katsuhiro Kutsuki, et al. · The Japan Society of Applied Physics
Defect distribution in PADS a-Si:H and its application for solar cells
2016 · Yasushi Sobajima, Yusuke Nishio, et al. · The Japan Society of Applied Physics
Works count: 16
Citation count: 79
H-index: 6
I10-index: 3
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