Author

Yung-Hung Huang

Observed name: Y.L. Huang

Institutions: National Taiwan Normal University, National Taiwan University, Academia Sinica

Observed institutions: Ming Chi University of Technology, National Taiwan Normal University, National Taiwan University, National Dong Hwa University, Research Center for Applied Science, Academia Sinica, Academia Sinica, National Kaohsiung University of Applied Sciences

ORCID: 0009-0002-0090-7430

Observed ORCID: 0009-0002-0090-7430

OpenAlex ID: A5077595691

Ultrafast Exciton Dynamics in Scalable Monolayer MoS2 Synthesized by Metal Sulfurization

2020 · Hsu-Sheng Tsai, Yung-Hung Huang, et al. · ACS Omega · 46

Retention mechanism of Cu-doped SiO2-based resistive memory

2011 · Chih-Yi Liu, Yung-Hung Huang, et al. · Journal of Physics D Applied Physics · 19

Boosted urea electrooxidation activity by dynamic steady blending CoOOH–Ni(OH) 2 nanoclusters for H 2 production in a pH-asymmetric electrolyzer

2024 · Shih-Mao Peng, Shu-Ting Chang, et al. · Journal of Materials Chemistry A · 10

Magnetic enhancements of defect-mediated spin polarized photocatalytic CO 2 reduction of Sn 2 P 2 S 6

2026 · Chih-Ying Huang, Cheng-Yu Yu, et al. · Journal of Materials Chemistry A · 8

Efficient solar-assisted seawater splitting in alkaline solution using perovskite–graphene–Si tandem integration

2025 · Po-Hsien Wu, Yung-Hung Huang, et al. · Journal of Materials Chemistry A · 3

Dual-functional atomic layer graphene enable bias-free photoelectrochemical iodide oxidation reaction for seawater splitting

2026 · Yung-Hung Huang, Po-Hsien Wu, et al. · Carbon · 1

Retention Failure Mechanism for Low-Resistance-States of Cu-doped SiO2Resistive Memory

2014 · Chih-Yi Liu, Yueh-Ying Tsai, et al. · Ferroelectrics · 1

Author response for "Boosted Urea Electrooxidation Activity by Dynamic Steady Blending CoOOH-Ni(OH)2 Nanoclusters for H2 Production in a pH-asymmetric Electrolyzer"

2024 · Shih-Mao Peng, Shu-Ting Chang, et al. · Publons reviews and discussion

The Impact of Bending and Light Exposure on the Resistive Switching Characteristics of Transparent Flexible ITO/ZnO/ITO Resistive RAM (RRAM)

2015 · C.L. Lin, Y.H. Yang, et al. · International Conference on Solid State Devices and Materials (SSDM)

Works count: 9

Citation count: 88

H-index: 4

I10-index: 3