Author

Chengyi Liu

Institutions: University of Electronic Science and Technology of China, Wuhan University, State Key Laboratory of Electronic Thin Films and Integrated Devices

Observed institutions: University of Electronic Science and Technology of China, Wuhan University, State Key Laboratory of Electronic Thin Films and Integrated Devices

ORCID: 0000-0003-4719-2348

Observed ORCID: 0000-0003-4719-2348

OpenAlex ID: A5077690291

Modeling and Analysis of SiC Capacitive Pressure Sensors Based on FEA Postprocessing With Infinitesimal Approach

2022 · Chengyi Liu, Jiangfeng Du, et al. · IEEE Sensors Journal · 5

Study on Stress–Strain Characteristics of SiO2 Films for High-Temperature SiC Capacitive Pressure Sensors Using FEA and Dimensional Analysis of Nanoindentation

2022 · Jiangfeng Du, Yang Xu, et al. · IEEE Sensors Journal · 3

Creep behavior of SiO2 films treated at elevated temperatures for SiC capacitive pressure sensors using nanoindentation technique and FE analysis

2025 · Chengyi Liu, Jiangfeng Du, et al. · Journal of Non-Crystalline Solids · 2

Trap-induced gate transient current variation in E-mode p-GaN gate GaN power HEMTs: characterization and physical mechanism

2026 · Yapeng Zhao, Chengyi Liu, et al. · Microelectronics Journal

3D simulation study of decoupled dual-gate p-GaN power HEMT with high forward threshold voltage and low reverse conduction loss

2026 · Yapeng Zhao, Chengyi Liu, et al. · Semiconductor Science and Technology

An Integrated Multilevel Data Quality Control Strategy for Low-Cost GNSS Receivers in Urban Environments

2026 · Chenglong Ye, Qile Zhao, et al. · IEEE Sensors Journal

Works count: 6

Citation count: 10

H-index: 2

I10-index: