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Shota Kaneki

Observed names: Kaneki, Shota, S Kaneki, S. Kaneki
ORCID: 0000-0003-0806-8571
Observed ORCID: 0000-0003-0806-8571
OpenAlex ID: A5077802690
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
2017 · Tamotsu Hashizume, Kenya Nishiguchi, et al. · Materials Science in Semiconductor Processing · 160
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Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
2016 · Shota Kaneki, Joji Ohira, et al. · Applied Physics Letters · 104
Effects of postmetallization annealing on interface properties of Al 2 O 3 /GaN structures
2018 · Tamotsu Hashizume, Shota Kaneki, et al. · Applied Physics Express · 97
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High Thermoelectric Power Factor of High‐Mobility 2D Electron Gas
2017 · Hiromichi Ohta, Sung Wng Kim, et al. · Advanced Science · 76
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Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
2019 · Yuji Ando, Shota Kaneki, et al. · Applied Physics Express · 56
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Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse
2024 · Shota Kaneki, Taichiro Konno, et al. · Applied Physics Letters · 26
Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
2017 · M. Matys, S. Kaneki, et al. · Journal of Applied Physics · 20
Quartz-free hydride vapor phase epitaxy for production of large size GaN-on-GaN epitaxial wafers
2025 · Shota Kaneki, Taichiro Konno, et al. · Applied Physics Express · 19
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Structural and optical properties of epitaxial Sc x Al1− x N coherently grown on GaN bulk substrates by sputtering method
2024 · Takuya Maeda, Yusuke Wakamoto, et al. · Applied Physics Letters · 19
Interface characterization of Al2O3/m-plane GaN structure
2021 · Shota Kaneki, Tamotsu Hashizume · AIP Advances · 17
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Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3
2017 · Shiro Ozaki, Kozo Makiyama, et al. · Applied Physics Express · 14
Improved DC performance and current stability of ultrathin-Al 2 O 3 /InAlN/GaN MOS-HEMTs with post-metallization-annealing process
2020 · S Ozaki, K Makiyama, et al. · Semiconductor Science and Technology · 13
6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma
2025 · Hiroshi Ohta, Yoshinobu Narita, et al. · Applied Physics Letters · 11
Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals
2024 · K. Sano, H. Fujikura, et al. · Applied Physics Letters · 5
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In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
2025 · Akihiro Shimada, Haruna Shiomi, et al. · Journal of Applied Physics · 1
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Hydride vapor phase epitaxy for 6-inch GaN-on-GaN wafer production
2026 · Shota Kaneki, Taichiro Konno, et al. · Light-Emitting Devices, Materials, and Applications
Extremely small trap concentrations in high-purity n-type GaN grown by quartz-free hydride vapor phase epitaxy
2026 · Yusuke Hirayama, Masahiro Horita, et al. · Applied Physics Express
Effects of 850 °C annealing on near-surface defects in Mg-ion-implanted GaN examined using MOS structures
2025 · Genta Shindo, Yuki Hatakeyama, et al. · AIP Advances
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Recent progress in HVPE-based GaN substrate fabrication
2025 · Hajime Fujikura, Taichiro Konno, et al. · Gallium Nitride Materials and Devices
GaN and AlGaN epitaxy by HVPE
2024 · Hajime Fujikura, Taichiro Konno, et al. · Gallium Nitride Materials and Devices
[Highlight]Marked reduction of electron trap concentrations in HVPE-grown GaN layers
2021 · Takeshi Kimura, Taiichiro Konno, et al. · The Japan Society of Applied Physics
Operand analysis of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction
2021 · Haruna Shiomi, Akihiro Shimada, et al. · The Japan Society of Applied Physics
Al_2O_3/m面GaN構造の界面特性評価【JST・京大機械翻訳】
2021 · Shota Kaneki, Hashizume Tamotsu · AIP Advances
[Highlight]Operand observation of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction
2020 · Akihiro Shimada, Haruna Shiomi, et al. · The Japan Society of Applied Physics
Thickness dependence of flat band voltage shift induced by gamma-ray irradiation in Al 2 O 3 /GaN MOS diodes with PMA
2019 · Keito Aoshima, Masahiro Horita, et al. · The Japan Society of Applied Physics
Works count: 34
Citation count: 638
H-index: 12
I10-index: 13
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