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Shoeib Babaee Touski

Observed name: Touski, Shoeib Babaee
ORCID: 0000-0002-6322-3397
Observed ORCID: 0000-0002-6322-3397
OpenAlex ID: A5078022402
Structural, electrical, and Rashba properties of monolayer Janus Si 2 X Y ( X , Y =P, As, Sb, and Bi)
2021 · Shoeib Babaee Touski, Nayereh Ghobadi · Physical review. B./Physical review. B · 44
Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
2022 · Nayereh Ghobadi, Manouchehr Hosseini, et al. · IEEE Transactions on Electron Devices · 34
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Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi 2 X 4 ( X = N, P, As and Sb)
2021 · Shoeib Babaee Touski, Nayereh Ghobadi · Journal of Physics D Applied Physics · 27
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Electronic and photocatalytic properties of Antimonene nanosheets
2020 · Alireza Kokabi, Shoeib Babaee Touski · Physica E Low-dimensional Systems and Nanostructures · 26
Substrate surface corrugation effects on the electronic transport in graphene nanoribbons
2013 · Shoeib Babaee Touski, Mahdi Pourfath · Applied Physics Letters · 26
The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field
2020 · Nayereh Ghobadi, Shoeib Babaee Touski · Journal of Physics Condensed Matter · 25
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A comparative study of substrates disorder on mobility in the Graphene nanoribbon: Charged impurity, surface optical phonon, surface roughness
2019 · Shoeib Babaee Touski, Manouchehr Hosseini · Physica E Low-dimensional Systems and Nanostructures · 23
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Enhanced spin-flip scattering by surface roughness in WS2 and MoS2 armchair nanoribbons
2017 · Shoeib Babaee Touski, Rafael Roldán, et al. · Physical review. B./Physical review. B · 23
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Electrical Properties of Double-Gate Field-Effect Transistor Based on MA2N4 (M = Ti, Zr, and Hf; A = Si, Ge, and Sn) Monolayers
2023 · Nona Hasani, Majid Shalchian, et al. · IEEE Transactions on Electron Devices · 21
Effects of spin-orbit coupling on the electronic properties of the buckled III–V monolayers
2021 · Nona Hasani, Ashkan Rajabi-Maram, et al. · Journal of Magnetism and Magnetic Materials · 21
Hydrogen storage performance enhancement and bandgap opening of M-Decorated (M = Li, Na and K) III4–V4 monolayer by fluorine functionalization
2022 · Alireza Kokabi, Shoeib Babaee Touski · International Journal of Hydrogen Energy · 19
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Tuning electronic properties of MSb (M = C, Si, Ge and Sn) monolayers by strain engineering
2021 · Ashkan Rajabi-Maram, Nona Hasani, et al. · Physica E Low-dimensional Systems and Nanostructures · 18
Strain engineering of spin and Rashba splitting in Group-III monochalcogenide MX (M = Ga, In and X = S, Se, Te) monolayer
2020 · Mohammad Ariapour, Shoeib Babaee Touski · Journal of Magnetism and Magnetic Materials · 18
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Electrical and electronic properties of strained mono-layer InTe
2019 · Shoeib Babaee Touski, Mohammad Ariapour, et al. · Physica E Low-dimensional Systems and Nanostructures · 18
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Strain engineering of electronic and spin properties in SnX (X = P, As, Sb, Bi) monolayers
2022 · Nona Hasani, Ashkan Rajabi-Maram, et al. · Journal of Physics and Chemistry of Solids · 17
Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene
2020 · Shoeib Babaee Touski, Nayereh Ghobadi · Physica E Low-dimensional Systems and Nanostructures · 17
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Spin splitting and Rashba effect at mono-layer GaTe in the presence of strain
2019 · Mohammad Ariapour, Shoeib Babaee Touski · Materials Research Express · 16
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Field-Effect Transistor Based on MoSi₂N₄ Monolayer for Digital Logic Applications
2024 · Hamidreza Ghanbari Khorram, Samad Sheikhaei, et al. · IEEE Transactions on Electron Devices · 12
Strain induced modification in electronic properties of monolayer InSb
2021 · Shoeib Babaee Touski · Superlattices and Microstructures · 12
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Effects of vertical electric field and charged impurities on the spin-polarized transport of β -antimonene armchair nanoribbons
2021 · Shoeib Babaee Touski, M. Pilar López-Sancho · Physical review. B./Physical review. B · 12
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Structural, electrical and optical properties of bilayer SiX (X = N, P, As and Sb)
2021 · Nayereh Ghobadi, Shoeib Babaee Touski · Journal of Physics Condensed Matter · 11
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Structural and electronic properties of hexagonal MXH (M = C, Si, Ge and Sn; X = N, P, As and Sb) monolayers: A first-principles prediction
2023 · Ashkan Rajabi-Maram, Nona Hasani, et al. · Physica E Low-dimensional Systems and Nanostructures · 10
Spin relaxation in graphene nanoribbons in the presence of substrate surface roughness
2016 · Zahra Chaghazardi, Shoeib Babaee Touski, et al. · Journal of Applied Physics · 10
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Electronic, rashba and photocatalytic properties of janus XMoYZ2 (X= S, Se, Te ; Y=Si, Ge and Z=N, P) monolayers
2024 · Ehsan Zamanian, Shoeib Babaee Touski · Physica E Low-dimensional Systems and Nanostructures · 9
Piezoelectric Field Effect and Field-Effect Transistors Based on MoSi22N4, MoSi2P4, and MoGe2N4 Monolayers
2023 · Hesameddin Adib, Mohsen Mazaherifar, et al. · IEEE Transactions on Electron Devices · 9
Works count: 63
Citation count: 584
H-index: 16
I10-index: 23
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