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Morteza Gholipour
Observed names:
Gholipour, Morteza,
M. Gholipour
Institution:
Babol Noshirvani University of Technology
Observed institutions:
University of Illinois Urbana-Champaign,
University of Tehran,
Babol Noshirvani University of Technology
ORCID:
0000-0001-6290-9461
Observed ORCID:
0000-0001-6290-9461
OpenAlex ID:
A5078084595
A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation
2015
·
Ying-Yu Chen
, Amit Sangai
, et al.
·
IEEE Transactions on Nanotechnology
·
110
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins
2022
·
Erfan Abbasian
, Farzaneh Izadinasab
, et al.
·
IEEE Transactions on Circuits and Systems I Regular Papers
·
79
Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis
2015
·
Morteza Gholipour
, Ying-Yu Chen
, et al.
·
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
·
68
Highly accurate SPICE-compatible modeling for single- and double-gate GNRFETs with studies on technology scaling
2014
·
Morteza Gholipour
, Ying-Yu Chen
, et al.
·
Design, Automation, and Test in Europe
·
59
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
2022
·
Erfan Abbasian
, Shilpi Birla
, et al.
·
Microelectronics Journal
·
46
A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology
2022
·
Erfan Abbasian
, Morteza Gholipour
, et al.
·
Arabian Journal for Science and Engineering
·
45
A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology
2022
·
Erfan Abbasian
, Elangovan Mani
, et al.
·
Circuits Systems and Signal Processing
·
45
Graphene nano-ribbon field-effect transistors as future low-power devices
2013
·
Ying-Yu Chen
, Amit Sangai
, et al.
·
International Symposium on Low Power Electronics and Design (ISLPED)
·
45
Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications
2021
·
Erfan Abbasian
, Morteza Gholipour
·
AEU - International Journal of Electronics and Communications
·
42
Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications
2021
·
Erfan Abbasian
, Morteza Gholipour
·
International Journal of Circuit Theory and Applications
·
41
A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology
2021
·
Erfan Abbasian
, Shilpi Birla
, et al.
·
Silicon
·
36
PDF
A variation-aware design for storage cells using Schottky-barrier-type GNRFETs
2020
·
Erfan Abbasian
, Morteza Gholipour
·
Journal of Computational Electronics
·
36
Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications
2022
·
Erfan Abbasian
, Morteza Gholipour
·
Circuits Systems and Signal Processing
·
32
Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design
2014
·
Morteza Gholipour
, Nasser Masoumi
, et al.
·
IEEE Transactions on Electron Devices
·
27
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design
2021
·
Erfan Abbasian
, Morteza Gholipour
, et al.
·
International Journal of Circuit Theory and Applications
·
24
Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET
2021
·
Armin Gooran-Shoorakchaly
, Alireza Aghanejad Ahmadchally
, et al.
·
IEEE Transactions on Electron Devices
·
23
A low‐leakage single‐bitline 9T SRAM cell with read‐disturbance removal and high writability for low‐power biomedical applications
2022
·
Erfan Abbasian
, Morteza Gholipour
·
International Journal of Circuit Theory and Applications
·
22
Schottky-barrier-type Graphene Nano-Ribbon Field-Effect Transistors: A study on compact modeling, process variation, and circuit performance
2013
·
Ying-Yu Chen
, Amit Sangai
, et al.
·
IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)
·
22
Design space exploration of low-power flip-flops in FinFET technology
2020
·
Ehsan Mahmoodi
, Morteza Gholipour
·
Integration
·
20
Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures
2013
·
Morteza Gholipour
, Nasser Masoumi
·
Microelectronics Journal
·
20
Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology
2021
·
Farzaneh Izadinasab
, Morteza Gholipour
·
Microelectronics Journal
·
19
An energy-efficient design of ternary SRAM using GNRFETs
2024
·
Maedeh Orouji
, Erfan Abbasian
, et al.
·
International Journal of Electronics
·
16
Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications
2022
·
Erfan Abbasian
, Morteza Gholipour
·
Semiconductor Science and Technology
·
16
Compact Modeling to Device- and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors
2017
·
Morteza Gholipour
, Ying-Yu Chen
, et al.
·
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
·
16
A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region
2017
·
Morteza Gholipour
·
IEEE Transactions on Electron Devices
·
16
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Works count:
64
Citation count:
1,071
H-index:
20
I10-index:
31
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