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Author

Danial Keighobadi

Observed name: D Keighobadi
Institution: Semnan University
Observed institution: Semnan University
ORCID: 0000-0002-5655-7751
Observed ORCID: 0000-0002-5655-7751
OpenAlex ID: A5078141056
An Analytical Drain Current Model for the Cylindrical Channel Gate-All-Around Heterojunction Tunnel FETs
2019 · Danial Keighobadi, Saeed Mohammadi, et al. · IEEE Transactions on Electron Devices · 31
Switching Performance Investigation of a Gate-All-Around Core-Source InGaAs/InP TFET
2020 · Danial Keighobadi, Saeed Mohammadi, et al. · Transactions on Electrical and Electronic Materials · 12
A Universal Analytical Potential Model for Double-Gate Heterostructure Tunnel FETs
2019 · Saeed Mohammadi, Danial Keighobadi · IEEE Transactions on Electron Devices · 11
Recessed Gate Cylindrical Heterostructure TFET, a Device with Extremely Steep Subthreshold Swing
2021 · Danial Keighobadi, Saeed Mohammadi, et al. · Transactions on Electrical and Electronic Materials · 9
Physical Analysis on the DC and RF Operations of a Novel SOI-MESFET with Protruded Gate and Dual Wells
2021 · Mohaddeseh Mohtaram, Ali A. Orouji, et al. · Silicon · 8
Optimizing Sb2Se3 solar cells with CdIn2S4 buffer for high-efficiency and stability: a comprehensive analysis
2026 · Danial Keighobadi, Mehdi Mousavi-Kamazani, et al. · Materials & Design · 6
Physical and analytical modeling of drain current of double-gate heterostructure tunnel FETs
2018 · D Keighobadi, S Mohammadi · Semiconductor Science and Technology · 6
Enhanced performance of Sb₂Se₃-based solar cells with Fe doped CuGa(S,Te)2 as a secondary absorber
2026 · Danial Keighobadi, Ali Asghar Orouji, et al. · Materials Today Communications · 2
Enhancing Sb2Se3 thin-film solar cell efficiency via CuGaSe2 dual-absorber integration
2026 · Danial Keighobadi, Mehdi Mousavi-Kamazani, et al. · Scientific Reports · 1
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Sb2Se3/MAPbI3 thin-film solar cells: Interface engineering and performance enhancement
2026 · Danial Keighobadi, Ali Asghar Orouji, et al. · Results in Engineering
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Works count: 10
Citation count: 86
H-index: 6
I10-index: 3
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