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Lukas Czornomaz

Observed names: Czornomaz, Lukas, L Czornomaz, L. Czornomaz, LUKAS CZORNOMAZ
Observed institutions: IBM (United States), ETH Zurich, IBM Research - Thomas J. Watson Research Center, IBM Research - Zurich, Lumiphase (Switzerland), Communauté Université Grenoble Alpes, Integrated Systems Laboratory, Université Grenoble Alpes, Leibniz Institute for High Performance Microelectronics
ORCID: 0000-0002-2239-6961
Observed ORCID: 0000-0002-2239-6961
OpenAlex ID: A5078239385
Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon
2018 · Stefan Abel, Felix Eltes, et al. · Nature Materials · 571
Integrated gallium phosphide nonlinear photonics
2019 · Dalziel J. Wilson, Katharina Schneider, et al. · Nature Photonics · 388
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High-speed III-V nanowire photodetector monolithically integrated on Si
2020 · Svenja Mauthe, Yannick Baumgartner, et al. · Nature Communications · 251
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A BaTiO 3 -Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform
2019 · Felix Eltes, Christian Mai, et al. · Journal of Lightwave Technology · 214
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A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
2021 · Clarissa Convertino, Cezar B. Zota, et al. · Nature Electronics · 137
A Hybrid Barium Titanate–Silicon Photonics Platform for Ultraefficient Electro-Optic Tuning
2015 · Stefan Abel, Thilo Stoferle, et al. · Journal of Lightwave Technology · 133
Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon
2019 · J. Elliott Ortmann, Felix Eltes, et al. · ACS Photonics · 89
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Electrochemical Performance of All-Solid-State Li-Ion Batteries Based on Garnet Electrolyte Using Silicon as a Model Electrode
2018 · Giulio Ferraresi, Mario El Kazzi, et al. · ACS Energy Letters · 87
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
2014 · N. Daix, E. Uccelli, et al. · APL Materials · 85
Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
2015 · L. Czornomaz, E. Uccelli, et al. · Symposium on VLSI Technology · 83
Gallium Phosphide-on-Silicon Dioxide Photonic Devices
2018 · Katharina Schneider, Pol Welter, et al. · Journal of Lightwave Technology · 79
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Optomechanics with one-dimensional gallium phosphide photonic crystal cavities
2019 · Katharina Schneider, Yannick Baumgartner, et al. · Optica · 56
Elucidating the Surface Reactions of an Amorphous Si Thin Film as a Model Electrode for Li-Ion Batteries
2016 · Giulio Ferraresi, Lukas Czornomaz, et al. · ACS Applied Materials & Interfaces · 55
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
2012 · L. Czornomaz, N. Daix, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 52
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
2012 · L. Czornomaz, M. El Kazzi, et al. · Solid-State Electronics · 52
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
2019 · Carlos Navarro, Siegfried Karg, et al. · Nature Electronics · 50
Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
2015 · Kristy J. Kormondy, Stefan Abel, et al. · Microelectronic Engineering · 47
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Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
2015 · V. Deshpande, V. Djara, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 46
CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $I_{ON}=156~\mu \text{A}/\mu \text{m}$ at $V_{DD}= 0.5$ V and $I_{OFF}=100$ nA/$\mu \text{m}$
2016 · Vladimir Djara, Veeresh Deshpande, et al. · IEEE Electron Device Letters · 44
Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
2013 · L. Czornomaz, N. Daix, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 40
Monolithically Integrated CMOS-Compatible III–V on Silicon Lasers
2018 · Marc Seifried, Gustavo Villares, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 39
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20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon
2019 · Axel Tessmann, Arnulf Leuther, et al. · IEEE Journal of Solid-State Circuits · 38
InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
2018 · C. Convertino, C. Zota, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 36
High-speed CMOS-compatible III-V on Si membrane photodetectors
2020 · Yannick Baumgartner, Daniele Caimi, et al. · Optics Express · 35
InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
2018 · Clarissa Convertino, Cezar Zota, et al. · Materials · 35
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Works count: 137
Citation count: 3,519
H-index: 27
I10-index: 60
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