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R. A. Masut

Observed names: Masut, R. A., Masut, Remo A, Masut, Rémo A., R A Masut, R. A. MASUT, R. Masut, R.A. Masut, REMO A. MASUT, Remo A Masut, Remo A. Masut, Remo Masut
Observed institutions: École Polytechnique, Amherst College, Universidade Estadual de Campinas (UNICAMP), Keio University, University of Massachusetts Amherst, Regroupement Québécois sur les Matériaux de Pointe, Institute for Microstructural Sciences, National Research Council Canada, Université Pierre-et-Marie-Curie, Polytechnique Montréal, Université de Montréal, Brooklyn College
ORCID: 0000-0001-7888-6655
Observed ORCID: 0000-0001-7888-6655
OpenAlex ID: A5078415893
Photoreflectance study of narrow-well strained-layer Inx Ga1−x As/GaAs coupled multiple-quantum-well structures
1988 · S. H. Pan, H. Shen, et al. · Physical review. B, Condensed matter · 190
Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
1997 · H. Marchand, P. Desjardins, et al. · Applied Physics Letters · 102
A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure
1997 · P. Cova, A. Singh, et al. · Journal of Applied Physics · 97
A method for the analysis of multiphase bonding structures in amorphous SiOxNy films
2005 · P. Cova, S. Poulin, et al. · Journal of Applied Physics · 85
Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy
1998 · P. Cova, A. Singh, et al. · Solid-State Electronics · 77
Numerical Simulation of the Thermomechanical Behavior of Extruded Bismuth Telluride Alloy Module
2009 · Th. Clin, S. Turenne, et al. · Journal of Electronic Materials · 60
Finite Element Thermomechanical Modeling of Large Area Thermoelectric Generators based on Bismuth Telluride Alloys
2010 · S. Turenne, Th. Clin, et al. · Journal of Electronic Materials · 58
Self-consistent determination of the band offsets in InAsxP1−x/InP strained-layer quantum wells and the bowing parameter of bulk InAsxP1−x
1996 · M. Beaudoin, A. Bensaada, et al. · Physical review. B, Condensed matter · 54
Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP
1993 · R. Leonelli, C. A. Tran, et al. · Physical review. B, Condensed matter · 52
Carrier thermal escape in families of InAs/InP self-assembled quantum dots
2010 · Guillaume Gélinas, Ali Lanacer, et al. · Physical Review B · 49
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Effect of unintentionally introduced oxygen on the electron–cyclotron resonance chemical-vapor deposition of SiNX films
2002 · P. Cova, R. A. Masut, et al. · Journal of Applied Physics · 49
Empirical tight-binding model for the electronic structure of dilute GaNAs alloys
2003 · N. Shtinkov, P. Desjardins, et al. · Physical review. B, Condensed matter · 48
Directional Mass Transport by Momentum Transfer from Ion Beam to Solid
1995 · L. Cliche, S. Roorda, et al. · Physical Review Letters · 43
Numerical Simulation of Performance and Thermomechanical Behavior of Thermoelectric Modules with Segmented Bismuth-Telluride-Based Legs
2013 · M. Picard, S. Turenne, et al. · Journal of Electronic Materials · 40
Misfit strain, relaxation, and band-gap shift in GaxIn1−xP/InP epitaxial layers
1994 · A. Bensaada, A. Chennouf, et al. · Journal of Applied Physics · 38
Effet des paramètres de croissance sur les couches épitaxiales d'InP obtenues par MOCVD (metal-organic chemical vapor deposition) à basse pression
1991 · P. Cova, R. A. Masut, et al. · Canadian Journal of Physics · 35
Raman Scattering from InGaAs/GaAs strained-layer superlattices
1988 · F. Iikawa, F. Cerdeira, et al. · Solid State Communications · 34
p-Type Bismuth Telluride-Based Composite Thermoelectric Materials Produced by Mechanical Alloying and Hot Extrusion
2012 · M. K. Keshavarz, D. Vasilevskiy, et al. · Journal of Electronic Materials · 33
Extruded Bismuth-Telluride-Based n-Type Alloys for Waste Heat Thermoelectric Recovery Applications
2009 · C. André, D. Vasilevskiy, et al. · Journal of Electronic Materials · 32
Occupation statistics of dislocation deep levels in III-V compounds
1982 · Remo Masut, Claude M. Penchina, et al. · Journal of Applied Physics · 32
Generation of Nanosized Particles during Mechanical Alloying and Their Evolution through the Hot Extrusion Process in Bismuth-Telluride-Based Alloys
2010 · D. Vasilevskiy, M. S. Dawood, et al. · Journal of Electronic Materials · 31
Directional effects during ion implantation: Lateral mass transport and anisotropic growth
1997 · M. Chicoine, S. Roorda, et al. · Physical review. B, Condensed matter · 30
Influence of Se on the electron mobility in extruded Bi2(Te1−xSex)3 (x⩽0.125) thermoelectric alloys
2002 · D. Vasilevskiy, A. Sami, et al. · Journal of Applied Physics · 29
Strain relaxation and exciton localization effects on the Stokes shift in InAsxP1−x/InP multiple quantum wells
1998 · A. Aı̈t-Ouali, R. Y.-F. Yip, et al. · Journal of Applied Physics · 28
Ab initio piezoelectric properties of Al0.5Sc0.5N : Impact of alloy configuration on the d33,f piezoelectric strain coefficient
2017 · P. Daoust, P. Desjardins, et al. · Physical Review Materials · 24
Works count: 235
Citation count: 2,861
H-index: 24
I10-index: 98
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