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Mansura Sadek
Observed name:
Sadek, Mansura
Institution:
Analog Devices (United States)
Observed institutions:
Analog Devices (United States),
Pennsylvania State University,
Bangladesh University of Engineering and Technology
ORCID:
0000-0003-2258-8338
Observed ORCID:
0000-0003-2258-8338
OpenAlex ID:
A5078761325
Recent advances in GaN-based power devices and integration
2025
·
Yixin Xiong
, Mansura Sadek
, et al.
·
Semiconductor Science and Technology
·
41
GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching
2024
·
Jesse T. Kemmerling
, Rian Guan
, et al.
·
IEEE Transactions on Electron Devices
·
36
12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes
2021
·
Sang-Woo Han
, Jianan Song
, et al.
·
IEEE Transactions on Electron Devices
·
33
PDF
Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes
2022
·
Jesse T. Kemmerling
, Rian Guan
, et al.
·
IEEE Electron Device Letters
·
20
High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n Diodes
2022
·
Mansura Sadek
, Sang-Woo Han
, et al.
·
IEEE Transactions on Electron Devices
·
13
Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier
2024
·
Yixin Xiong
, Rian Guan
, et al.
·
IEEE Electron Device Letters
·
7
Extreme-Bandgap Al 0.62 Ga 0.38 N Thin Channel HEMT With AlN/GaN Digital-Alloy and Regrown GaN Ohmic Contacts
2026
·
Abdullah Al Mamun Mazumder
, Tariq Jamil
, et al.
·
IEEE Electron Device Letters
·
5
Leakage Current and Breakdown Characteristics of Isolation in Gallium Nitride Lateral Power Devices
2024
·
Mansura Sadek
, Sang-Woo Han
, et al.
·
IEEE Transactions on Electron Devices
·
4
8.85-kV/0.72-A Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode
2022
·
Sang-Woo Han
, Mansura Sadek
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
4
Regrown n++-GaN ohmic contacts to high-Al content AlxGa1−xN (x > 0.6) digital alloy channels using AlN/GaN short-period superlattice
2026
·
Tariq Jamil
, Abdullah Al Mamun Mazumder
, et al.
·
Applied Physics Letters
·
3
Field-dependent carrier transport in implanted isolation region of GaN lateral power devices
2025
·
Mansura Sadek
, Yixin Xiong
, et al.
·
APL Materials
·
3
2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching
2024
·
Mansura Sadek
, Jesse T. Kemmerling
, et al.
·
Conference digest
·
2
High current density and low on-resistance in ultra-wide bandgap Al0.65Ga0.35N-channel MOS-HEMTs for kV power switching
2026
·
Aditya Dev Varma
, Hridibrata Pal
, et al.
·
APL Electronic Devices
·
1
800 $^\circ$C Air-Ambient Operation of Extreme-Bandgap Al$_{x}$Ga$_{1-x}$N (x>0.6) Digital and Random-Alloy Channel HEMTs
2026
·
Mazumder, Abdullah Al Mamun
, Jamil, Tariq
, et al.
·
arXiv (Cornell University)
PDF
Threshold Voltage Improvement of Enhancement-Mode Al2O3/ AIGaN/GaN MIS-HEMT with High Drain Current Density
2018
·
Mansura Sadek
, Md. Kawsar Alam
·
International Conference on Electrical and Computer Engineering (ICECE)
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Works count:
15
Citation count:
172
H-index:
6
I10-index:
5
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