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Ahmet Faruk Özdemir

Observed names: 15212 Özdemir, Ahmet Faruk, 1970- thesis advisor, A F Özdemir, A Özdemir, A. F. Özdemir, A. Faruk ÖZDEMİR, A. Faruk Özdemir, A.F Özdemir, A.F. Ozdemir, A.F. Özdemir, A.F. Özdemır, Ahmet Faruk Ozdemir, Ahmet Faruk ÖZDEMİR, Ahmet Faruk Özdemira
Observed institution: Süleyman Demirel Üniversitesi
ORCID: 0000-0001-9879-9209
Observed ORCID: 0000-0001-9879-9209
OpenAlex ID: A5079030127
The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes fromI–V–Tcharacteristics
2006 · A F Özdemir, A Turut, et al. · Semiconductor Science and Technology · 97
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Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range
2016 · Çiğdem Ş. Güçlü, Ahmet Faruk Özdemir, et al. · Applied Physics A · 72
Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)
2018 · Ç.Ş. Güçlü, A.F. Özdemir, et al. · Materials Science in Semiconductor Processing · 70
The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements
2018 · M. Hussein Al-Dharob, H. Elif Lapa, et al. · Materials Science in Semiconductor Processing · 65
The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements
2020 · Mohammad Hussein Al-Dharob, Ali Kökce, et al. · Journal of Physics and Chemistry of Solids · 44
Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature
2022 · Şemsettin Altındal, Ahmet Faruk Özdemir, et al. · Journal of Materials Science Materials in Electronics · 42
The interface state energy distribution from capacitance–frequency characteristics of gold/n-type Gallium arsenide Schottky barrier diodes exposed to air
2003 · A Özdemir · Thin Solid Films · 39
Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes
2019 · Havva Elif Lapa, Ali Kökce, et al. · Indian Journal of Physics · 36
Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts
2009 · Ahmet Faruk Özdemir, Durmuş Ali Aldemir, et al. · Synthetic Metals · 33
Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer
2011 · Durmuş Ali Aldemir, Mustafa Esen, et al. · Thin Solid Films · 30
Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3Interfacial Layer at Room Temperature
2016 · Ç.Ş. Güçlü, A.F. Özdemır, et al. · Acta Physica Polonica A · 29
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The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K
2021 · Ç. Ş. Güçlü, A. F. Özdemir, et al. · Journal of Materials Science Materials in Electronics · 27
The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices
2007 · Ahmet Faruk Özdemir, Ayşegül Gök, et al. · Thin Solid Films · 26
Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts
2009 · T. Göksu, N. Yıldırım, et al. · Microelectronic Engineering · 25
Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room temperature
2017 · Havva Elif Lapa, Ali Kökce, et al. · The European Physical Journal Applied Physics · 22
Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes
2012 · Durmuş Ali Aldemir, Ali Kökce, et al. · Microelectronic Engineering · 21
Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy
2024 · Merve Yürekli, Ahmet Faruk Özdemir, et al. · Journal of Materials Science Materials in Electronics · 20
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A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods
2018 · Havva Elif Lapa, Ali Kökce, et al. · Bulletin of Materials Science · 19
The effect of hydrostatic pressure on the electrical characterization of Au/n - InP Schottky diodes
2010 · N. Ucar, A.F. Ozdemir, et al. · Superlattices and Microstructures · 18
Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması
2017 · Durmuş Ali Aldemir, Ali Kökce, et al. · Sakarya University Journal of Science · 17
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The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure
2009 · A. F. Özdemir, Z. Kotan, et al. · The European Physical Journal Applied Physics · 17
Effects of measurement temperature and metal thickness on Schottky diode characteristics
2021 · A.F. Özdemir, T. Göksu, et al. · Physica B Condensed Matter · 16
On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes
2015 · A.F. Özdemir, D.E. Akcan, et al. · Acta Physica Polonica A · 16
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The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height
2020 · Havva Elif Lapa, Çiğdem Şükriye Güçlü, et al. · Applied Physics A · 15
Detailed analysis of possible current-transport mechanisms (CTMs) in Au/(P3DMTFT)/n-GaAs Schottky diodes (SDs) in a wide range of temperature
2025 · Yılmaz Kansız, Ömer Sevgili, et al. · Physica B Condensed Matter · 14
Works count: 50
Citation count: 922
H-index: 18
I10-index: 27
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