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Roman Körner

Observed names: Körner, Roman, R. Korner, Roman Alexander Korner, Roman Korner
Institution: TRUMPF (Germany)
ORCID: 0009-0004-6439-1474
Observed ORCID: 0009-0004-6439-1474
OpenAlex ID: A5079044783
GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz
2014 · Michael Oehme, Konrad Kostecki, et al. · Optics Express · 108
GeSn Heterojunction LEDs on Si Substrates
2014 · Michael Oehme, Konrad Kostecki, et al. · IEEE Photonics Technology Letters · 95
Integrated Collinear Refractive Index Sensor with Ge PIN Photodiodes
2018 · Lion Augel, Yuma Kawaguchi, et al. · ACS Photonics · 38
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Absorption coefficients of GeSn extracted from PIN photodetector response
2015 · Kaiheng Ye, Wogong Zhang, et al. · Solid-State Electronics · 24
Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes
2013 · Marc Schmid, Michael Oehme, et al. · Thin Solid Films · 16
S -parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode
2016 · Wogong Zhang, Yuji Yamamoto, et al. · Japanese Journal of Applied Physics · 6
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Recent advancement in pushing the VCSEL RIN towards the shot-noise limit for single-channel data rates of 100 Gb/s and beyond
2024 · Bedouin Sassiya, Philip Moser, et al. · Vertical-Cavity Surface-Emitting Lasers · 5
An integrated plasmonic refractive index sensor: Al nanohole arrays on Ge PIN photodiodes
2017 · L. Augel, S. Bechler, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
Polarization-Stabilized 1130 nm VCSEL Arrays: Performance and Scalability
2024 · Andrea Ott, Daniela Stange, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 4
Recent advancements of VCSEL array modules for battery drying applications
2025 · Daniela Ingenhorst, Rolf Apetz, et al. · High-Power Diode Laser Technology · 1
Quantum Efficiency Scaling by Cascaded Ge Multi-Stage Tunnel Junctions
2025 · Michael Hack, Roman Körner, et al. · Journal of Lightwave Technology
Ge PIN photodetectors with nanohole arrays for refractive index sensing
2017 · L. Augel, R. Korner, et al. · IEEE International Conference on Group IV Photonics (GFP)
S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications
2016 · Wogong Zhang, Michael Oehme, et al. · IEEE MTT-S International Wireless Symposium (IWS)
High speed vertical GeSn photodiodes on Si
2014 · Martin Gollhofer, Michael Oehme, et al. · IEEE International Conference on Group IV Photonics (GFP)
Works count: 16
Citation count: 302
H-index: 6
I10-index: 5
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